Molecular beam epitaxy growth of pseudomorphic II–VI multilayered structures for blue/green laser diodes and light-emitting diodes

Author(s):  
J. Han
1999 ◽  
Author(s):  
Mika J. Saarinen ◽  
Seppo Orsila ◽  
Mika Toivonen ◽  
Pekka Savolainen ◽  
Tiina E. Kuuslahti ◽  
...  

1999 ◽  
Vol 201-202 ◽  
pp. 1032-1035 ◽  
Author(s):  
P Uusimaa ◽  
P Sipilä ◽  
M Saarinen ◽  
L Toikkanen ◽  
A Rinta-Möykky ◽  
...  

2005 ◽  
Vol 278 (1-4) ◽  
pp. 361-366 ◽  
Author(s):  
S.E. Hooper ◽  
M. Kauer ◽  
V. Bousquet ◽  
K. Johnson ◽  
C. Zellweger ◽  
...  

1999 ◽  
Vol 201-202 ◽  
pp. 985-989 ◽  
Author(s):  
Seppo Orsila ◽  
Jukka Köngäs ◽  
Mika Toivonen ◽  
Pekka Savolainen ◽  
Marko Jalonen ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Abdul Kareem K. Soopy ◽  
Zhaonan Li ◽  
Tianyi Tang ◽  
Jiaqian Sun ◽  
Bo Xu ◽  
...  

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.


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