Molecular beam epitaxy growth and characterizations of (Zn, Mg)(S,Se) epilayers for II–VI blue/green laser diodes

1995 ◽  
Vol 13 (3) ◽  
pp. 681-682 ◽  
Author(s):  
D. C. Grillo ◽  
M. D. Ringle ◽  
G. C. Hua ◽  
J. Han ◽  
R. L. Gunshor ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Molecular Beam Epitaxy Growth

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates

Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes

1999 ◽  
Vol 201-202 ◽  
pp. 877-881 ◽  
Author(s):  
M Toivonen ◽  
P Savolainen ◽  
S Orsila ◽  
V Vilokkinen ◽  
M Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Molecular Beam Epitaxy Growth ◽  
Quantum Well Laser ◽  
Nm Range

Molecular Beam Epitaxy of II/VI Compounds for Blue/Green Laser Diodes

1994 ◽  
Vol 340 ◽  
Author(s):  
J.M. Gaines
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
High Energy ◽  
Green Laser ◽  
Mbe Growth ◽  
Lattice Matching ◽  
Migration Enhanced Epitaxy ◽  
Sticking Coefficients

ABSTRACTThe growth of I1/VI epitaxial layers by molecular beam epitaxy (MBE) for blue/green lasers is described. To elucidate the issues in the growth of II/VI materials, the differences between II/V and II/VI MBE growth are addressed, including factors such as: substrates, molecular beam sources, lattice matching, sticking coefficients, and surface diffusion. Results of reflection high-energy diffraction (RHEED) oscillation measurements are presented. RHEED oscillations have proven to be a valuable in-situ tool for controlling certain aspects of 1I/VI MBE growth, such as ZnSySe1-y composition, Zn1-xMgxSe composition, and the growth rate of ZnSe during migration-enhanced epitaxy.

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