Effect of lanthanum doping on the electrical properties of sol-gel derived ferroelectric lead–zirconate–titanate for ultra-large-scale integration dynamic random access memory applications

1993 ◽  
Vol 11 (4) ◽  
pp. 1302 ◽  
Author(s):  
C. Sudhama
Keyword(s):  
Lead Zirconate Titanate ◽  
Large Scale ◽  
Sol Gel ◽  
Random Access ◽  
Lead Zirconate ◽  
Access Memory ◽  
Lanthanum Doping ◽  
Large Scale Integration ◽  
Memory Applications ◽  
Scale Integration

The Effects of Lead-Compensation and Thermal Processing on the Characteristics of DC-Magnetron Sputtered Lead Zirconate Titanate Thin Films

1991 ◽  
Vol 230 ◽  
Author(s):  
Vinay Chikarmane ◽  
Chandra Sudhama ◽  
Jiyoung Kim ◽  
Jack Lee ◽  
A I Tasch
Keyword(s):  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Large Scale ◽  
Random Access ◽  
Lead Zirconate ◽  
Thermal Budget ◽  
Low Leakage ◽  
Zirconate Titanate ◽  
Low Leakage Current ◽  
Scale Integration

AbstractThe feasibility of the fabrication of thin film capacitors of Lead Zirconate Titanate (PZT) by reactive DC-Magnetron sputtering, with large switched charge and low leakage current densities for ultra-large scale integration Dynamic Random Access Memory (ULSI DRAM) applications has been demonstrated. As-deposited films were found to be predominantly pyrochlore; therefore, a subsequent phase transformation-inducing thermal processing step was key to obtaining device quality films. The importance of the thermal budget in optimizing the device characteristics of PZT films is discussed. The importance of the role of Pb compensation in lowering the required thermal budget and significantly enhancing device characteristics is shown.

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