Fabrication of gated silicon field-emission cathodes for vacuum microelectronics and electron-beam applications

1993 ◽  
Vol 11 (2) ◽  
pp. 454 ◽  
Author(s):  
Johann T. Trujillo
Keyword(s):  
Electron Beam ◽  
Field Emission ◽  
Vacuum Microelectronics ◽  
Field Emission Cathodes

Fabrication and Characterization of Singly-Addressable Arrays of Polysilicon Field-Emission Cathodes.

2000 ◽  
Vol 621 ◽  
Author(s):  
N.N. Chubun ◽  
A.G. Chakhovskoi ◽  
C.E. Hunt ◽  
M. Hajra
Keyword(s):  
Field Emission ◽  
Radius Of Curvature ◽  
Micro Electro Mechanical Systems ◽  
Field Emission Properties ◽  
Vacuum Microelectronics ◽  
Cell Spacing ◽  
Gold Thin Film ◽  
Large Size ◽  
A Cell ◽  
Field Emission Cathodes

ABSTRACTPolysilicon is a promising candidate material for field-emission microelectronics devices. It can be competitive for large-size, cost-sensitive applications such as flat-panel displays and micro electro-mechanical systems. Singly-addressable arrays of field-emission cells were fabricated in a matrix configuration using a subtractive process on Polysilicon-On-Insulator substrates. Matrix rows were fabricated as insulated polycrystalline silicon strips with sharp emission tips; and matrix columns were deposited as gold thin film electrodes with round gate openings. Ion implantation has been used to provide the required conductivity of the poly-Si layer. To reduce radius of curvature of the polysilicon tips, a sharpening oxidation process was used. The final device had polysilicon emission tips with end radii smaller than 15 nm, surrounded by gate apertures of 0.4 μm in diameter. Field emission properties of the cathodes were measured at a pressure of about 10-8 Torr, to emulate vacuum conditions available in sealed vacuum microelectronics devices. It was found that an emission current of 1 nA appears at a gate voltage of 25 V and can be increased up to 1μA at 70 V. Over this range of current, no “semiconductor” deviation from the Fowler-Nordheim equation was observed. I-V characteristics measured in cells of a 10x10 matrix, with a cell spacing of 50 μm demonstrated good uniformity and reproducibility.

Integrated tungsten nanofiber field emission cathodes selectively grown by nanoscale electron beam-induced deposition

2005 ◽  
Vol 86 (18) ◽  
pp. 183106 ◽  
Author(s):  
X. Yang ◽  
M. L. Simpson ◽  
S. J. Randolph ◽  
P. D. Rack ◽  
L. R. Baylor ◽  
...  
Keyword(s):  
Electron Beam ◽  
Field Emission ◽  
Electron Beam Induced Deposition ◽  
Field Emission Cathodes

scholarly journals Electron Diagnostics for Extreme High Brightness Nano-Blade Field Emission Cathodes

Instruments ◽  
2019 ◽  
Vol 3 (4) ◽  
pp. 57
Author(s):  
Gerard Lawler ◽  
Kunal Sanwalka ◽  
Yumeng Zhuang ◽  
Victor Yu ◽  
Timo Paschen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Field Emission ◽  
Transverse Energy ◽  
Modern Science ◽  
Damage Threshold ◽  
X Rays ◽  
The Novel ◽  
High Brightness ◽  
Nanoscale Structure ◽  
Field Emission Cathodes

Electron beams are essential tools in modern science. They are ubiquitous in fields ranging from microscopy to the creation of coherent ultra-fast X-rays to lithography. To keep pace with demand, electron beam brightness must be continually increased. One of the main strategic aims of the Center for Bright Beams (CBB), a National Science Foundation Science and Technology Center, is to increase brightness from photocathodes by two orders of magnitude. Improving the state-of-the-art for photoemission-based cathodes is one possibility. Several factors have led to an alternative design becoming an increasing necessity; the nanoscale structure. Field emission sources from nano-tips would be an ideal candidate were it not for their low current and damage threshold. A 1-dimensional extended nano-fabricated blade, i.e., a projected tip, can solve the problems inherent in both designs. The novel geometry has been demonstrated to produce extremely high brightness electron beam bunches and is significantly more robust and easier to manufacture than traditional photocathodes. Theory indicates electron emission up to keV energies. We thus present a system of diagnostics capable of analyzing the cathodes and assessing their viability. The diagnostics are designed to measure the electron spectrum up to keV energies, with sub meV resolution at <100 eV, mean transverse energy (MTE), emission uniformity, and cathode lifetime. We also report preliminary data on total extracted charge and maximum detectable electron energy with a simplified retarding field spectrometer.

Electron holography of p-n junctions

1996 ◽  
Vol 54 ◽  
pp. 974-975
Author(s):  
B.G. Frost ◽  
D.C. Joy ◽  
L.F. Allard ◽  
E. Voelkl
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Field Emission ◽  
Ccd Camera ◽  
Image Plane ◽  
Reference Wave ◽  
Field Of View ◽  
Control Mode ◽  
Objective Lens ◽  
Electron Holography

A wide holographic field of view (up to 15 μm in the Hitachi-HF2000) is achieved in a TEM by switching off the objective lens and imaging the sample by the first intermediate lens. Fig.1 shows the corresponding ray diagram for low magnification image plane off-axis holography. A coherent electron beam modulated by the sample in its amplitude and its phase is superimposed on a plane reference wave by a negatively biased Möllenstedt-type biprism.Our holograms are acquired utilizing a Hitachi HF-2000 field emission electron microscope at 200 kV. Essential for holography are a field emission gun and an electron biprism. At low magnification, the excitation of each lens must be appropriately adjusted by the free lens control mode of the microscope. The holograms are acquired by a 1024 by 1024 slow-scan CCD-camera and processed by the “Holoworks” software. The hologram fringes indicate positively and negatively charged areas in a sample by the direction of the fringe bending (Fig.2).

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