Optimization of molecular beam epitaxy grown pin multiple quantum well electroabsorption modulators for the 1.5-μm wavelength region

T. Y. Chang

doi:10.1116/1.586742

Optimization of molecular beam epitaxy grown pin multiple quantum well electroabsorption modulators for the 1.5-μm wavelength region

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586742 ◽

1993 ◽

Vol 11 (3) ◽

pp. 929 ◽

Cited By ~ 2

Author(s):

T. Y. Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Wavelength Region ◽

Multiple Quantum ◽

Electroabsorption Modulators

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Molecular beam epitaxy growth of lattice-matched multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80153-4 ◽

1995 ◽

Vol 150 ◽

pp. 1323-1327 ◽

Cited By ~ 2

Author(s):

H. Künzel ◽

J. Böttcher ◽

A. Hase ◽

V. Hofsäss ◽

C. Kaden ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Distributed Feedback ◽

Molecular Beam Epitaxy Growth ◽

Multiple Quantum ◽

Distributed Feedback Laser ◽

Lattice Matched

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Raman scattering from GaAs/AlGaAs multiple quantum well structures grown by two-step molecular beam epitaxy

Current Applied Physics ◽

10.1016/j.cap.2016.12.023 ◽

2017 ◽

Vol 17 (3) ◽

pp. 398-402 ◽

Cited By ~ 5

Author(s):

Taegeon Lee ◽

Heesuk Rho ◽

Jin Dong Song ◽

Won Jun Choi

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Raman Scattering ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures

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Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.98481 ◽

1987 ◽

Vol 51 (4) ◽

pp. 221-223 ◽

Cited By ~ 20

Author(s):

Tow C. Chong ◽

Clifton G. Fonstad

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Si Substrates ◽

Low Threshold

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Strain-compensations for interfacial strain and average strain in InGaAs/InAIP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50016-x ◽

1994 ◽

pp. 69-73

Author(s):

K. Naniwae ◽

S. Sugou ◽

T. Anan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Average Strain ◽

Quantum Well Structures ◽

Gas Source ◽

Interfacial Strain

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Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

physica status solidi (a) ◽

10.1002/pssa.202070028 ◽

2020 ◽

Vol 217 (7) ◽

pp. 2070028

Author(s):

Yaozheng Wu ◽

Bin Liu ◽

Zhenhua Li ◽

Tao Tao ◽

Zili Xie ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum

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Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

Applied Physics Letters ◽

10.1063/1.3373834 ◽

2010 ◽

Vol 96 (14) ◽

pp. 141112 ◽

Cited By ~ 45

Author(s):

V. N. Jmerik ◽

A. M. Mizerov ◽

A. A. Sitnikova ◽

P. S. Kop’ev ◽

S. V. Ivanov ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Low Threshold

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Electroabsorption and modulator characteristics of InGaAsP multiple quantum well laser structures grown by laser-assisted metalorganic molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90384-0 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 64-68 ◽

Cited By ~ 1

Author(s):

H. Sugiura ◽

K. Wakita ◽

R. Iga ◽

T. Yamada

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Metalorganic Molecular Beam Epitaxy ◽

Multiple Quantum Well Laser

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Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590001 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1286 ◽

Cited By ~ 11

Author(s):

J. M. Van Hove

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures

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Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.112192 ◽

1994 ◽

Vol 65 (7) ◽

pp. 892-894 ◽

Cited By ~ 7

Author(s):

Guang‐Jye Shiau ◽

Chih‐Ping Chao ◽

Paul E. Burrows ◽

Stephen R. Forrest

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer ◽

Gas Source ◽

Low Threshold

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Molecular-beam epitaxy of phosphor-free 1.3 μm InAlGaAs multiple-quantum-well lasers on InP (100)

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2737434 ◽

2007 ◽

Vol 25 (3) ◽

pp. 1090 ◽

Cited By ~ 3

Author(s):

W. Li ◽

D. Moscicka ◽

A. Torfi ◽

W. I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum

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