Structural characterization of encapsulated Au/Zn/Au ohmic contacts to p-type GaAs

1993 ◽  
Vol 11 (1) ◽  
pp. 44 ◽  
Author(s):  
X. W. Lin
Keyword(s):  
Structural Characterization ◽  
Ohmic Contacts ◽  
P Type

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted

Organic-Inorganic Junctions formed on Porous Silicon: Isolation of a Surface Configuration primary to the Luminescence Mechanism.

1992 ◽  
Vol 283 ◽  
Author(s):  
T. R. Cottrell ◽  
J. B. Benziger ◽  
J. C. Yee ◽  
J. K. M. Chunt ◽  
A. B. Bocarslyt
Keyword(s):  
Porous Silicon ◽  
Conducting Polymers ◽  
Ohmic Contacts ◽  
Primary Component ◽  
Solution Ph ◽  
Porous Silicon Surface ◽  
Surface Configuration ◽  
Schottky Type ◽  
P Type

ABSTRACTOrganic-inorganic junctions were formed between porous silicon and various conjugated conducting polymers, poly(3-methylthiophene) and polypyrrole. Schottky type barriers were observed between the conducting polymers in their doped state and p and n-type porous silicon. In their undoped state the conducting polymers behave like p-type semiconductors. Consistent with this, ohmic contacts were observed between undoped conducting polymers and p-type porous silicon while rectifying behavior typical of a p-n junction was observed for conducting polymers deposited onto n-type porous silicon. During characterization of the porous silicon substrate, an investigation of the surface chemistry revealed a strong correspondence between solution pH and the luminescence intensity of porous silicon. Surface titration experiments were performed on p and n-type porous silicon and the results indicate that a monoprotic surface acid with a pKa between 3–4 is a primary component in the luminescence mechanism of porous silicon.

Photoluminescence study and structural characterization of p-type ZnO doped by N and/or As acceptors

2006 ◽  
Vol 22 (2) ◽  
pp. 10-14 ◽  
Author(s):  
E Przeździecka ◽  
E Kamińska ◽  
K P Korona ◽  
E Dynowska ◽  
W Dobrowolski ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Photoluminescence Study ◽  
P Type

Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions

2000 ◽  
Vol 338-342 ◽  
pp. 1017-1020 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Konstantinos Zekentes ◽  
George Konstantinidis ◽  
N. Papanicolaou ◽  
Irina P. Nikitina ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Morphological Characterization ◽  
P Type

Electrical and structural characterization of shallow As acceptors in natural p-type 2H-MoS2

2019 ◽  
Vol 114 (19) ◽  
pp. 192103
Author(s):  
J. R. Toledo ◽  
R. de Oliveira ◽  
P. H. Vaz ◽  
F. D. Brandão ◽  
G. M. Ribeiro ◽  
...  
Keyword(s):  
Structural Characterization ◽  
P Type

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon

2019 ◽  
Vol 963 ◽  
pp. 485-489
Author(s):  
Monia Spera ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Salvatore di Franco ◽  
Domenico Corso ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Specific Contact ◽  
Fabrication And Characterization ◽  
P Type

This paper reports on the formation and characterization of Ohmic contacts to n-type and p-type type 3C-SiC layers grown on silicon substrates. In particular, Ohmic contact behavior was obtained either using Ni or Ti/Al/Ni layers annealed at 950°C. The values of the specific contact resistance ρc estimated by means of circular TLM (C-TLM) structures varied in the range ~ 10-3-10-5 Ωcm2, depending on the doping level of the 3C-SiC layer. A structural analysis performed by X-Ray Diffraction (XRD) allowed to identify the main phases formed upon annealing, i.e., Ni2Si and Al3Ni2. The morphology of the reacted contacts depended on that of the underlying substrate. The results can be useful for the development of a variety of devices on the cubic 3C-SiC polytype.

The Formation and Characterization of Epitaxial Titanium Carbide Contacts to 4H-SiC

2000 ◽  
Vol 622 ◽  
Author(s):  
S.-K. Lee ◽  
E. Danielsson ◽  
C.-M. Zetterling ◽  
M. Östling ◽  
J.-P. Palmquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Titanium Carbide ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Interface Reaction ◽  
Schottky Contacts ◽  
Deposition Method ◽  
P Type

ABSTRACTEpitaxial TiC Ohmic and Schottky contacts to 4H-SiC were formed by a new deposition method, UHV co-evaporation with Ti and C60, at low temperature (< 500°C). We achieved a contact resistivity of 2 × 10−5Δcm2 at 25°C for as deposited Ohmic contacts on Al ion implanted 4H-Silicon carbide. The rectifying behavior of TiC Schottky contacts was also investigated using I-V and C-V. The measured Schottky barrier height (SBH) was 1.26 eV for n-type and 1.65 eV for p-type 4H-SiC using C-V measurements for frequencies ranging from 1kHz to 1MHz. LEED, RBS, XPS, and XRD measurements were performed to analyze composition ratio, interface reaction, and structural properties of the TiC epitaxial layer.

scholarly journals Investigation on the structural characterization of pulsed p-type porous silicon

2017 ◽  
Author(s):  
N. H. Abd Wahab ◽  
A. F. Abd Rahim ◽  
A. Mahmood ◽  
Y. Yusof
Keyword(s):  
Porous Silicon ◽  
Structural Characterization ◽  
P Type
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