scholarly journals Investigation on the structural characterization of pulsed p-type porous silicon

2017 ◽  
Author(s):  
N. H. Abd Wahab ◽  
A. F. Abd Rahim ◽  
A. Mahmood ◽  
Y. Yusof
Keyword(s):  
Porous Silicon ◽  
Structural Characterization ◽  
P Type

scholarly journals Macropore Formation and Pore Morphology Characterization of Heavily Doped p-Type Porous Silicon

2019 ◽  
Vol 166 (2) ◽  
pp. B9-B12 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Paula Martínez-Pérez ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Pore Morphology ◽  
Heavily Doped ◽  
P Type ◽  
Morphology Characterization ◽  
Macropore Formation

Organic-Inorganic Junctions formed on Porous Silicon: Isolation of a Surface Configuration primary to the Luminescence Mechanism.

1992 ◽  
Vol 283 ◽  
Author(s):  
T. R. Cottrell ◽  
J. B. Benziger ◽  
J. C. Yee ◽  
J. K. M. Chunt ◽  
A. B. Bocarslyt
Keyword(s):  
Porous Silicon ◽  
Conducting Polymers ◽  
Ohmic Contacts ◽  
Primary Component ◽  
Solution Ph ◽  
Porous Silicon Surface ◽  
Surface Configuration ◽  
Schottky Type ◽  
P Type

ABSTRACTOrganic-inorganic junctions were formed between porous silicon and various conjugated conducting polymers, poly(3-methylthiophene) and polypyrrole. Schottky type barriers were observed between the conducting polymers in their doped state and p and n-type porous silicon. In their undoped state the conducting polymers behave like p-type semiconductors. Consistent with this, ohmic contacts were observed between undoped conducting polymers and p-type porous silicon while rectifying behavior typical of a p-n junction was observed for conducting polymers deposited onto n-type porous silicon. During characterization of the porous silicon substrate, an investigation of the surface chemistry revealed a strong correspondence between solution pH and the luminescence intensity of porous silicon. Surface titration experiments were performed on p and n-type porous silicon and the results indicate that a monoprotic surface acid with a pKa between 3–4 is a primary component in the luminescence mechanism of porous silicon.

Photoluminescence study and structural characterization of p-type ZnO doped by N and/or As acceptors

2006 ◽  
Vol 22 (2) ◽  
pp. 10-14 ◽  
Author(s):  
E Przeździecka ◽  
E Kamińska ◽  
K P Korona ◽  
E Dynowska ◽  
W Dobrowolski ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Photoluminescence Study ◽  
P Type

Electrical and structural characterization of shallow As acceptors in natural p-type 2H-MoS2

2019 ◽  
Vol 114 (19) ◽  
pp. 192103
Author(s):  
J. R. Toledo ◽  
R. de Oliveira ◽  
P. H. Vaz ◽  
F. D. Brandão ◽  
G. M. Ribeiro ◽  
...  
Keyword(s):  
Structural Characterization ◽  
P Type

Electrochemical and Chemical Deposition of II-VI Semiconductors in Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
R. Herino ◽  
M. Gros-Jean ◽  
L. Montes ◽  
D. Lincot
Keyword(s):  
Porous Silicon ◽  
Chemical Deposition ◽  
Porous Films ◽  
Concentration Gradients ◽  
Strong Concentration ◽  
Acidic Solutions ◽  
Semiconductor Compounds ◽  
Metallic Cations ◽  
P Type

AbstractThe introduction of II-VI semiconductor compounds into porous silicon layers has been investigated in order to obtain transparent and conducting contacts with the inner surface of the material. CdTe and ZnSe have been electrodeposited cathodically on n type nanoporous electrodes from acidic solutions containing the metallic cations and dissolved oxides of selenium or tellurium. CdS incorporation into p-type porous silicon has been achieved by chemical bath deposition, from solutions containing cadmium complexes and thioacetamid as a sulfur donor. Characterization of the deposits has been performed by SEM observations, X-ray analysis and RBS. Results confirm the penetration of the compounds into the porous films, with small to strong concentration gradients in thickness depending on the deposition method. After deposition and sample drying, the luminescence of CdTe embedded layers has almost disappeared, whereas those containing ZnSe and CdS show a photoluminescence efficiency which is not severely degraded.

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