Selective and blanket copper chemical vapor deposition for ultra-large-scale integration

1993 ◽  
Vol 11 (6) ◽  
pp. 2107 ◽  
Author(s):  
A. Jain
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Large Scale Integration ◽  
Scale Integration

Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition

2005 ◽  
Vol 77 (2) ◽  
pp. 391-398 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masaharu Shiratani ◽  
Manabu Takeshita ◽  
Makoto Kita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Ionic Species ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Large Scale Integration ◽  
Scale Integration

H-assisted plasma chemical vapor deposition (HAPCVD) realizes control of deposition profile of Cu in trenches. The key to the control is ion irradiation to surfaces. With increasing the flux and energy of ions, the profile changes from conformal to subconformal and then to an anisotropic one, for which Cu material is filled from the bottom of the trench without deposition on the sidewall. H3+ and ArH+ are identified as the major ionic species which contribute to the control, and hence the deposition profile also depends on a ratio R = H2/(Ar + H2).

Comparative Study of Low Dielectric Constant Material Deposited Using Different Precursors

2011 ◽  
Vol 233-235 ◽  
pp. 2480-2485
Author(s):  
Yi Lung Cheng ◽  
Yi Shiung Lu ◽  
Tai Jung Chiu
Keyword(s):  
Thermal Stability ◽  
Vapor Deposition ◽  
Large Scale ◽  
Dielectric Material ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Large Scale Integration ◽  
Scale Integration

Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition (PECVD) in this work. The experimental results indicate that DEMS-based low-k films have superior electrical performance and better thermal stability as compared to 3MS-based low-k films. Therefore, DEMS-based films are the promising low-k materials which can be integrated in very large scale integration circuit as an inter-layer dielectric material.

scholarly journals Silicon Nitride Films Deposited by Atmospheric Pressure Chemical Vapor Deposition

1997 ◽  
Vol 495 ◽  
Author(s):  
Xian Lin ◽  
Denis Endisch ◽  
Xiaomeng Chen ◽  
Alain Kaloyeros
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Large Scale ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Scale Integration

ABSTRACTFilms of silicon nitride are widely used in semiconductor technologies for very large scale integration (VLSI), thin film transistor (TFT), and solar cell applications. Current production technologies for silicon nitride use low pressure chemical vapor deposition (LPCVD) at temperatures > 700 °C or plasma enhanced chemical vapor deposition (PECVD) at temperatures below 450 °C. In this report, successful deposition of silicon nitride films by the low temperature thermal atmospheric pressure chemical vapor deposition (APCVD) method is described. Using a novel precursor tetraiodosilane (SiI4), deposition of silicon nitride has been achieved at temperature as low as 400 °C. Data pertaining to the dependence of film properties on deposition temperature are presented, along with a evaluation of the deposition rate, composition, chemical structure, and conformality of the resulting films.

Structure Controlled Synthesis of Vertically Aligned Carbon Nanotubes Using Thermal Chemical Vapor Deposition Process

2010 ◽  
Vol 133 (3) ◽  
Author(s):  
Myung Gwan Hahm ◽  
Young-Kyun Kwon ◽  
Ahmed Busnaina ◽  
Yung Joon Jung
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Controlled Synthesis ◽  
Full Potential ◽  
Thermal Chemical Vapor Deposition ◽  
Vertically Aligned ◽  
Walled Carbon Nanotubes

Due to their unique one-dimensional nanostructure along with excellent mechanical, electrical, and optical properties, carbon nanotubes (CNTs) become a promising material for diverse nanotechnology applications. However, large-scale and structure controlled synthesis of CNTs still have many difficulties due to the lack of understanding of the fundamental growth mechanism of CNTs, as well as the difficulty of controlling atomic-scale physical and chemical reactions during the nanotube growth process. Especially, controlling the number of graphene wall, diameter, and chirality of CNTs are the most important issues that need to be solved to harness the full potential of CNTs. Here we report the large-scale selective synthesis of vertically aligned single walled carbon nanotubes (SWNTs) and double walled carbon nanotubes (DWNTs) by controlling the size of catalyst nanoparticles in the highly effective oxygen assisted thermal chemical vapor deposition (CVD) process. We also demonstrate a simple but powerful strategy for synthesizing ultrahigh density and diameter selected vertically aligned SWNTs through the precise control of carbon flow during a thermal CVD process.

scholarly journals Large scale structures in chemical vapor deposition-grown graphene on Ni thin films

2020 ◽  
Vol 709 ◽  
pp. 138225
Author(s):  
Derya Ataç ◽  
Johnny G.M. Sanderink ◽  
Sachin Kinge ◽  
Dirk J. Gravesteijn ◽  
Alexey Y. Kovalgin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Large Scale Structures ◽  
Scale Structures ◽  
Grown Graphene
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