Orientation dependence of normal incidence absorption in ellipsoidal-valley quantum wells

Y. Zhang

doi:10.1116/1.586503

Orientation dependence of normal incidence absorption in ellipsoidal-valley quantum wells

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586503 ◽

1993 ◽

Vol 11 (4) ◽

pp. 1681

Author(s):

Y. Zhang

Keyword(s):

Quantum Wells ◽

Normal Incidence ◽

Orientation Dependence

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Growth orientation dependence of normal incidence absorption in ellipsoidal‐valley quantum wells

Applied Physics Letters ◽

10.1063/1.108112 ◽

1992 ◽

Vol 61 (22) ◽

pp. 2694-2696 ◽

Cited By ~ 13

Author(s):

H. Xie ◽

J. Katz ◽

W. I. Wang

Keyword(s):

Quantum Wells ◽

Normal Incidence ◽

Orientation Dependence ◽

Growth Orientation

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Evaluation of electron-phonon coupling of Al0.27Ga0.73As/GaAs quantum wells by normal incidence reflectance

Solid State Communications ◽

10.1016/0038-1098(91)90910-n ◽

1991 ◽

Vol 79 (7) ◽

pp. 561-565 ◽

Cited By ~ 17

Author(s):

S. Selci ◽

A. Cricenti ◽

M. Righini ◽

C. Petrillo ◽

F. Sacchetti ◽

...

Keyword(s):

Quantum Wells ◽

Normal Incidence ◽

Phonon Coupling ◽

Electron Phonon Coupling

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Photoresponse study of normal incidence detection in p-type GaAs/AIGaAs multiple quantum wells

Journal of Electronic Materials ◽

10.1007/bf02657963 ◽

1995 ◽

Vol 24 (5) ◽

pp. 559-564 ◽

Cited By ~ 1

Author(s):

G. J. Brown ◽

F. Szmulowicz ◽

S. M. Hegde

Keyword(s):

Quantum Wells ◽

Normal Incidence ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

P Type

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Normal-incidence infrared modulators based on InAs/GaSb/AlSb quantum wells grown by molecular beam epitaxy

10.1117/12.271177 ◽

1997 ◽

Author(s):

Jody Alperin ◽

Qinghong Du ◽

Wen I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Normal Incidence

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Valley splitting and optical intersubband transitions at parallel and normal incidence in [001]-Ge/SiGe quantum wells

Physical Review B ◽

10.1103/physrevb.79.165310 ◽

2009 ◽

Vol 79 (16) ◽

Cited By ~ 16

Author(s):

Michele Virgilio ◽

Giuseppe Grosso

Keyword(s):

Quantum Wells ◽

Normal Incidence ◽

Intersubband Transitions ◽

Valley Splitting ◽

Sige Quantum Wells

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Observation of normal-incidence intersubband absorption inn-typeAl0.09Ga0.91Sb quantum wells

Physical Review B ◽

10.1103/physrevb.46.7244 ◽

1992 ◽

Vol 46 (11) ◽

pp. 7244-7247 ◽

Cited By ~ 18

Author(s):

E. R. Brown ◽

S. J. Eglash ◽

K. A. McIntosh

Keyword(s):

Quantum Wells ◽

Normal Incidence ◽

Intersubband Absorption

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Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

MRS Proceedings ◽

10.1557/proc-607-147 ◽

1999 ◽

Vol 607 ◽

Author(s):

Seung-Woong Lee ◽

Kazuhiko Hirakawa ◽

Yozo Shimada

Keyword(s):

Quantum Dots ◽

Quantum Wells ◽

High Mobility ◽

Normal Incidence ◽

Infrared Photodetector ◽

Inas Quantum Dots ◽

Operation Temperature ◽

Long Lifetime ◽

Quantum Dot Infrared Photodetector ◽

Self Assembled

AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

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