Growth orientation dependence of normal incidence absorption in ellipsoidal‐valley quantum wells

1992 ◽  
Vol 61 (22) ◽  
pp. 2694-2696 ◽  
Author(s):  
H. Xie ◽  
J. Katz ◽  
W. I. Wang
Keyword(s):  
Quantum Wells ◽  
Normal Incidence ◽  
Orientation Dependence ◽  
Growth Orientation

Crystal phase and growth orientation dependence of GaAs nanowires on NixGay seeds via vapor-solid-solid mechanism

2011 ◽  
Vol 99 (8) ◽  
pp. 083114 ◽  
Author(s):  
Ning Han ◽  
Alvin T. Hui ◽  
Fengyun Wang ◽  
Jared J. Hou ◽  
Fei Xiu ◽  
...  
Keyword(s):  
Orientation Dependence ◽  
Crystal Phase ◽  
Growth Orientation ◽  
Gaas Nanowires

-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism

2021 ◽  
Vol 864 ◽  
pp. 158786
Author(s):  
Hang Wang ◽  
Anqi Wang ◽  
Ying Wang ◽  
Zaixing Yang ◽  
Jun Yang ◽  
...  
Keyword(s):  
Orientation Dependence ◽  
Growth Orientation

Evaluation of electron-phonon coupling of Al0.27Ga0.73As/GaAs quantum wells by normal incidence reflectance

1991 ◽  
Vol 79 (7) ◽  
pp. 561-565 ◽  
Author(s):  
S. Selci ◽  
A. Cricenti ◽  
M. Righini ◽  
C. Petrillo ◽  
F. Sacchetti ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Normal Incidence ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

Observation of normal-incidence intersubband absorption inn-typeAl0.09Ga0.91Sb quantum wells

1992 ◽  
Vol 46 (11) ◽  
pp. 7244-7247 ◽  
Author(s):  
E. R. Brown ◽  
S. J. Eglash ◽  
K. A. McIntosh
Keyword(s):  
Quantum Wells ◽  
Normal Incidence ◽  
Intersubband Absorption

Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
Seung-Woong Lee ◽  
Kazuhiko Hirakawa ◽  
Yozo Shimada
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
High Mobility ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Operation Temperature ◽  
Long Lifetime ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled

AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

Can normal‐incidence absorption be realized withn‐doped (001)‐grown direct‐gap quantum wells?

1995 ◽  
Vol 78 (1) ◽  
pp. 295-298 ◽  
Author(s):  
L. C. Lew Yan Voon ◽  
M. Willatzen ◽  
L. R. Ram‐Mohan
Keyword(s):  
Quantum Wells ◽  
Normal Incidence
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