Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
1992 ◽
Vol 10
(4)
◽
pp. 1807
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Keyword(s):
Keyword(s):
1997 ◽
Vol 12
(8)
◽
pp. 943-946
◽
Keyword(s):
Keyword(s):
Keyword(s):