scholarly journals Influence of oval defects on transport properties in high-mobility two-dimensional electron gases

2016 ◽  
Vol 108 (9) ◽  
pp. 092103 ◽  
Author(s):  
L. Bockhorn ◽  
A. Velieva ◽  
S. Hakim ◽  
T. Wagner ◽  
E. P. Rugeramigabo ◽  
...  
Keyword(s):  
Transport Properties ◽  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high-mobility two-dimensional electron gases

2001 ◽  
Vol 79 (13) ◽  
pp. 2031-2033 ◽  
Author(s):  
L. Di Gaspare ◽  
K. Alfaramawi ◽  
F. Evangelisti ◽  
E. Palange ◽  
G. Barucca ◽  
...  
Keyword(s):  
High Mobility ◽  
Silicon On Insulator ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Polarization and charge-transfer effect on the transport properties in two-dimensional electron gases/LaNiO3 heterostructure

2018 ◽  
Vol 112 (2) ◽  
pp. 021601 ◽  
Author(s):  
M. J. Chen ◽  
X. K. Ning ◽  
Z. J. Wang ◽  
P. Liu ◽  
S. F. Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Transport Properties ◽  
Transfer Effect ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Oscillatory Hall effect in high-mobility two-dimensional electron gases

2008 ◽  
Vol 78 (8) ◽  
Author(s):  
Christoph Siegert ◽  
Arindam Ghosh ◽  
Michael Pepper ◽  
Ian Farrer ◽  
David A. Ritchie ◽  
...  
Keyword(s):  
Hall Effect ◽  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Correction to Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

Nano Letters ◽  
2017 ◽  
Vol 17 (4) ◽  
pp. 2738-2738
Author(s):  
Yunzhong Chen ◽  
Felix Trier ◽  
Takeshi Kasama ◽  
Dennis V. Christensen ◽  
Nicolas Bovet ◽  
...  
Keyword(s):  
High Mobility ◽  
Complex Oxide ◽  
Induced Polarization ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Oxide Interface ◽  
Electron Gases

High-mobility two-dimensional electron gases in Si/SiGe heterostructures on relaxed SiGe layers grown at high temperature

1997 ◽  
Vol 12 (8) ◽  
pp. 943-946 ◽  
Author(s):  
A C Churchill ◽  
D J Robbins ◽  
D J Wallis ◽  
N Griffin ◽  
D J Paul ◽  
...  
Keyword(s):  
High Temperature ◽  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

scholarly journals Rapid Thermal Annealing for Surface Optimisation of ZnO Substrates for MBE-Grown Oxide Two-Dimensional Electron Gases

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 776
Author(s):  
Matthew J. Sparks ◽  
Oscar W. Kennedy ◽  
Paul A. Warburton
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Control Sample ◽  
High Mobility ◽  
Annealed Sample ◽  
Sample Treatment ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Two-dimensional electron gases (2DEGs) at the ZnO/ZnMgO interface are promising for applications in spintronics and quantum computing due to the combination of low spin-orbit coupling and high electron mobility. Growing high mobility 2DEGs requires high quality substrates with low impurity densities. In this work we demonstrate a ZnO substrate sample treatment combining high temperature rapid thermal annealing and chemical etching to improve the surface quality for the subsequent growth of 2DEGs. This process enables the growth of a 2DEG with low-temperature mobility of 4.8×104 cm2V−1s−1. An unannealed control sample shows a scattering rate at least three times greater than the annealed sample.

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