scholarly journals Effect of Γ–X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures

1992 ◽  
Vol 10 (4) ◽  
pp. 1980 ◽  
Author(s):  
D. Z.-Y. Ting
Keyword(s):  
Electron Tunneling ◽  
Double Barrier ◽  
Tunneling Times

The effect of scattering on electron tunneling mechanism in double barrier heterostructures

1990 ◽  
Vol 7 (1) ◽  
pp. 29-34 ◽  
Author(s):  
B.Y. Gu ◽  
C. Coluzza ◽  
M. Mangiantini ◽  
A. Frova
Keyword(s):  
Electron Tunneling ◽  
Double Barrier ◽  
Tunneling Mechanism

Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodes

1992 ◽  
Vol 45 (24) ◽  
pp. 14407-14410 ◽  
Author(s):  
M. Tewordt ◽  
L. Marti´n-Moreno ◽  
J. T. Nicholls ◽  
M. Pepper ◽  
M. J. Kelly ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Single Electron ◽  
Resonant Tunneling Diodes ◽  
Double Barrier ◽  
Tunneling Diodes ◽  
Single Electron Tunneling ◽  
Double Barrier Resonant Tunneling

Effect of band mixing on hole-tunneling times in GaAs/AlAs double-barrier heterostructures

1992 ◽  
Vol 45 (7) ◽  
pp. 3576-3582 ◽  
Author(s):  
D. Z. -Y. Ting ◽  
E. T. Yu ◽  
T. C. McGill
Keyword(s):  
Double Barrier ◽  
Tunneling Times ◽  
Band Mixing

SINGLE-ELECTRON TUNNELING IN DOUBLE-BARRIER NANOSTRUCTURES

1992 ◽  
Vol 06 (13) ◽  
pp. 2321-2343 ◽  
Author(s):  
V.J. GOLDMAN ◽  
BO SU ◽  
J.E. CUNNINGHAM
Keyword(s):  
Coulomb Blockade ◽  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Theoretical Models ◽  
Single Electron ◽  
Double Barrier ◽  
Current Voltage ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

We review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models.

Electron tunneling in double-barrier diode

1995 ◽  
Vol 87-88 ◽  
pp. 75-78 ◽  
Author(s):  
Liu Yunpeng ◽  
Luo Enze
Keyword(s):  
Electron Tunneling ◽  
Double Barrier

Resonant electron tunneling in ZnSe/BeTe double‐barrier, single‐quantum‐well heterostructures

1996 ◽  
Vol 80 (11) ◽  
pp. 6329-6332 ◽  
Author(s):  
U. Lunz ◽  
M. Keim ◽  
G. Reuscher ◽  
F. Fischer ◽  
K. Schüll ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Tunneling ◽  
Single Quantum ◽  
Double Barrier ◽  
Single Quantum Well ◽  
Resonant Electron
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