Electrical degradation of Al/TiW/CoSi2 shallow junctions

1991 ◽  
Vol 9 (1) ◽  
pp. 69 ◽  
Author(s):  
S. A. Eshraghi
Keyword(s):  
Electrical Degradation ◽  
Shallow Junctions

Electrical Degradation and Breakdown in Polymers

IEE Review ◽  
1992 ◽  
Vol 38 (11-12) ◽  
pp. 404 ◽  
Author(s):  
W.G. Chadband
Keyword(s):  
Electrical Degradation

Effects of Sb, Zr, or Y addition on Electrical Degradation Characteristics of ZnO Varistors

2011 ◽  
Vol 131 (3) ◽  
pp. 219-224
Author(s):  
Takayuki Watanabe ◽  
Ai Fukumori ◽  
Yuji Akiyama ◽  
Masayuki Takada ◽  
Yuuki Sato ◽  
...  
Keyword(s):  
Electrical Degradation ◽  
Zno Varistors

Effects of Zr and Y Addition on the Electrical Degradation Characteristics of ZnO Varistors

2010 ◽  
Vol 130 (4) ◽  
pp. 394-402 ◽  
Author(s):  
Yuji Akiyama ◽  
Masayuki Takada ◽  
Ai Fukumori ◽  
Yuuki Sato ◽  
Shinzo Yoshikado
Keyword(s):  
Electrical Degradation ◽  
Zno Varistors

Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies

1998 ◽  
Author(s):  
J. Benbrik ◽  
G. Rolland ◽  
P. Perdu ◽  
B. Benteo ◽  
M. Casari ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Complete Characterization ◽  
Bipolar Transistors ◽  
Ion Beam Irradiation ◽  
Physical Mechanisms ◽  
Dc Characteristics ◽  
Electrical Degradation ◽  
Physical Phenomena

Abstract Focused Ion Beam is commonly used for IC repairs and modifications. However, FIB operation may also induce a damaging impact which can takes place far from the working area due to the charge-up phenomenon. A complete characterization joined to an in-depth understanding of the physical phenomena arising from FIB irradiation is therefore necessary to take into account spurious FIB induced effects and to enhance the success of FIB modifications. In this paper, we present the effects of FIB irradiation on the electrical DC performances of different electronic devices such as nMOS and pMOS transistors, CMOS inverters, PN junctions and bipolar transistors. From the observed behavior of the DC characteristics evolution of the devices, some suggestions about physical mechanisms inducing the electrical degradation are proposed.

Photo-induced and electrical degradation of organic field-effect transistors

2020 ◽  
Vol 82 ◽  
pp. 105717
Author(s):  
Paweł Piotr Cielecki ◽  
Till Leißner ◽  
Mehrad Ahmadpour ◽  
Morten Madsen ◽  
Horst-Günter Rubahn ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Electrical Degradation

Electrical degradation and breakdown in polymers

Polymer ◽  
1993 ◽  
Vol 34 (18) ◽  
pp. 3966
Author(s):  
R.A. Pethrick
Keyword(s):  
Electrical Degradation

scholarly journals The surface epithelium of teleostean fish gills. Cellular and junctional adaptations of the chloride cell in relation to salt adaptation.

1979 ◽  
Vol 80 (1) ◽  
pp. 96-117 ◽  
Author(s):  
C Sardet ◽  
M Pisam ◽  
J Maetz
Keyword(s):  
Salt Water ◽  
Freeze Fracture ◽  
Morphological Characteristics ◽  
Chloride Cell ◽  
Chloride Cells ◽  
Surface Epithelium ◽  
Salt Adaptation ◽  
Resistance Pathway ◽  
Shallow Junctions ◽  
Respiratory Cells

Various species of teleostean fishes were adapted to fresh or salt water and their gill surface epithelium was examined using several techniques of electron microscopy. In both fresh and salt water the branchial epithelium is mostly covered by flat respiratory cells. They are characterized by unusual outer membrane fracture faces containing intramembranous particles and pits in various stages of ordered aggregation. Freeze fracture studies showed that the tight junctions between respiratory cells are made of several interconnecting strands, probably representing high resistance junctions. The organization of intramembranous elements and the morphological characteristics of the junctions do not vary in relation to the external salinity. Towards the base of the secondary gill lamellae, the layer of respiratory cells is interrupted by mitochondria-rich cells ("chloride cells"), also linked to respiratory cells by multistranded junctions. There is a fundamental reorganization of the chloride cells associated with salt water adaptation. In salt water young adjacent chloride cells send interdigitations into preexisting chloride cells. The apex of the seawater chloride cell is therefore part of a mosaic of sister cells linked to surrounding respiratory cells by multistranded junctions. The chloride cells are linked to each other by shallow junctions made of only one strand and permeable to lanthanum. It is therefore suggested that salt water adaptation triggers a cellular reorganization of the epithelium in such a way that leaky junctions (a low resistance pathway) appear at the apex of the chloride cells. Chloride cells are characterized by an extensive tubular reticulum which is an extension of the basolateral plasma membrane. It is made of repeating units and is the site of numerous ion pumps. The presence of shallow junctions in sea water-adapted fish makes it possible for the reticulum to contact the external milieu. In contrast in the freshwater-adapted fish the chloride cell's tubular reticulum is separated by deep apical junctions from the external environment. Based on these observations we discuss how solutes could transfer across the epithelium.

A Model to Explain the Variations of “End-of-Range” Defect Densities with Ion Implantation Parameters

1992 ◽  
Vol 279 ◽  
Author(s):  
L. Laanab ◽  
C. Bergaud ◽  
M. M. Faye ◽  
J. Faure ◽  
A. Martinez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Computer Simulations ◽  
Point Defects ◽  
Numerical Optimization ◽  
Experimental Investigations ◽  
Shallow Junctions ◽  
Quantitative Explanation ◽  
Defect Densities

ABSTRACTComputer simulations in conjunction with TEM experiments have been used to test the different models usually adopted in the literature to explain the formation of “End Of Range”(EOR) defects which appear after annealing of preamorphized silicon layers. Only one survives careful experimental investigations involving Si+, Ge+, Sn+ amorphization at RT and LNT. The “excess-interstitial” model appears relevant at least for a semi-quantitative explanation of the source of point-defects which after recombination and agglomeration, lead to the formation of these defects. This model may be used for the numerical optimization of conditions for the production of high performances ullra-shallow junctions.

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