Electrical Degradation and Breakdown in Polymers

IEE Review ◽  
1992 ◽  
Vol 38 (11-12) ◽  
pp. 404 ◽  
Author(s):  
W.G. Chadband
Keyword(s):  
Electrical Degradation

Effects of Sb, Zr, or Y addition on Electrical Degradation Characteristics of ZnO Varistors

2011 ◽  
Vol 131 (3) ◽  
pp. 219-224
Author(s):  
Takayuki Watanabe ◽  
Ai Fukumori ◽  
Yuji Akiyama ◽  
Masayuki Takada ◽  
Yuuki Sato ◽  
...  
Keyword(s):  
Electrical Degradation ◽  
Zno Varistors

Effects of Zr and Y Addition on the Electrical Degradation Characteristics of ZnO Varistors

2010 ◽  
Vol 130 (4) ◽  
pp. 394-402 ◽  
Author(s):  
Yuji Akiyama ◽  
Masayuki Takada ◽  
Ai Fukumori ◽  
Yuuki Sato ◽  
Shinzo Yoshikado
Keyword(s):  
Electrical Degradation ◽  
Zno Varistors

Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies

1998 ◽  
Author(s):  
J. Benbrik ◽  
G. Rolland ◽  
P. Perdu ◽  
B. Benteo ◽  
M. Casari ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Complete Characterization ◽  
Bipolar Transistors ◽  
Ion Beam Irradiation ◽  
Physical Mechanisms ◽  
Dc Characteristics ◽  
Electrical Degradation ◽  
Physical Phenomena

Abstract Focused Ion Beam is commonly used for IC repairs and modifications. However, FIB operation may also induce a damaging impact which can takes place far from the working area due to the charge-up phenomenon. A complete characterization joined to an in-depth understanding of the physical phenomena arising from FIB irradiation is therefore necessary to take into account spurious FIB induced effects and to enhance the success of FIB modifications. In this paper, we present the effects of FIB irradiation on the electrical DC performances of different electronic devices such as nMOS and pMOS transistors, CMOS inverters, PN junctions and bipolar transistors. From the observed behavior of the DC characteristics evolution of the devices, some suggestions about physical mechanisms inducing the electrical degradation are proposed.

Photo-induced and electrical degradation of organic field-effect transistors

2020 ◽  
Vol 82 ◽  
pp. 105717
Author(s):  
Paweł Piotr Cielecki ◽  
Till Leißner ◽  
Mehrad Ahmadpour ◽  
Morten Madsen ◽  
Horst-Günter Rubahn ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Electrical Degradation

Electrical degradation and breakdown in polymers

Polymer ◽  
1993 ◽  
Vol 34 (18) ◽  
pp. 3966
Author(s):  
R.A. Pethrick
Keyword(s):  
Electrical Degradation

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

The Effect of Transition of Valence State of Additives on Electrical Degradation of ZnO Varistors

2002 ◽  
Vol 228-229 ◽  
pp. 233-236
Author(s):  
Yohei Satoi ◽  
Takanori Ishikawa ◽  
Takahiro Kaneyoshi ◽  
Shinzo Yoshikado
Keyword(s):  
Valence State ◽  
Electrical Degradation ◽  
Zno Varistors
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