Temperature dependent transport measurements on strained Si/Si1−xGex resonant tunneling devices

1991 ◽  
Vol 9 (4) ◽  
pp. 2059 ◽  
Author(s):  
Ulf Gennser
Keyword(s):  
Resonant Tunneling ◽  
Temperature Dependent ◽  
Strained Si ◽  
Transport Measurements ◽  
Dependent Transport ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

Magneto-Transport Measurements on Si/Si1−xGex Resonant Tunneling Structures

1991 ◽  
Vol 220 ◽  
Author(s):  
Ulf Gennser ◽  
V. P Kesan ◽  
D. A. Syphers ◽  
T. P. Smith ◽  
S. S Iyer ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Critical Thickness ◽  
Strained Si ◽  
3 Dimensional ◽  
Spacer Layer ◽  
Band Mixing ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices ◽  
The Magnetic Field ◽  
Landau Level Splitting

ABSTRACTWe have investigated magneto-transport properties of differently strained Si/ Si1−xGex resonant tunneling devices. The built-in strain was either put in the Si layers, by means of a thick., relaxed Si1−xGex buffer layer, or in the Si1−xGex layers, in which case all Si1−xGex layers were grown below the critical thickness, and a Si1−xGex spacer layer with graded Ge content was used. Magnetic fields parallel to the interface have been employed to probe the in-plane dispersion in the quantum well. This is used to study the effect of band-mixing in the two strain configurations. A field perpendicular to the interface resolves some Landau level splitting. Most strikingly, however, is the similarity in the spectra with the case when the magnetic field is applied parallel to the interfaces. This indicates broadening of the levels, possibly due to scattering, and the importance of 3-dimensional band structure effects.

RESONANT TUNNELING DEVICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-585-C5-588 ◽  
Author(s):  
R. E. NAHORY ◽  
N. TABATABAIE
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

Bulk transport and contact limitation of MoS2 multilayer flake transistors untangled via temperature-dependent transport measurements

2015 ◽  
Vol 212 (9) ◽  
pp. 2059-2067 ◽  
Author(s):  
Ilja Vladimirov ◽  
Catherine Chow ◽  
Andrew-James Strudwick ◽  
Wolfgang Kowalsky ◽  
Matthias Georg Schwab ◽  
...  
Keyword(s):  
Temperature Dependent ◽  
Transport Measurements ◽  
Dependent Transport ◽  
Bulk Transport

Simulation of resonant tunneling devices based on different materials

2013 ◽  
Author(s):  
I. I. Abramov ◽  
Natali V. Kolomejtseva ◽  
I. A. Romanova ◽  
A. G. Klimovich
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices
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