Growth and carrier concentration control of Hg1−xCdxTe heterostructures using isothermal vapor phase epitaxy and vapor phase epitaxy techniques

1991 ◽  
Vol 9 (3) ◽  
pp. 1639 ◽  
Author(s):  
S. B. Lee
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy

Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
Debra L. Kaiser ◽  
Piotr Becla
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Infrared Detector ◽  
Vapor Phase Epitaxy ◽  
Diffusion Method ◽  
Depth Profiles ◽  
Growth Properties ◽  
Concentration Depth Profiles

ABSTRACTClose-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy

2011 ◽  
Vol 315 (1) ◽  
pp. 64-67 ◽  
Author(s):  
Tomonari Sato ◽  
Manabu Mitsuhara ◽  
Ryuzo Iga ◽  
Shigeru Kanazawa ◽  
Yasuyuki Inoue
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Electrical Profiles in GaN/Al2O3 Layers with Conductive Interface Regions

2001 ◽  
Vol 6 ◽  
Author(s):  
D.C. Look ◽  
J. E. Hoelscher ◽  
J. L. Brown ◽  
G. D. Via
Keyword(s):  
Hall Effect ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Shallow Donor ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Region ◽  
Hall Effect Measurements

Differential Hall-effect measurements are used to obtain profiles of the mobility, μ, and carrier concentration, n, in a 6-μm-thick GaN layer grown on Al2O3 by hydride vapor phase epitaxy (HVPE). In the top 1-μm region (surface), μ ≈ 1000 cm2/V-s and n ≈ 3 × 1016 cm−3, whereas in the bottom 0.75-μm region (interface), μ ≈ 50 cm2/V-s and n ≈ 2 × 1019 cm−3. Throughout the layer, the carrier concentration correlates well with the O and Si concentrations, with [Si] dominant near the surface, and [O] dominant near the interface, proving the shallow-donor nature of O. The average mobility and carrier concentration in the top 5 μm, i.e., the “bulk” region, are close to the values deduced by a much simpler analysis, introduced previously.

High Resolution X-ray Diffraction and X-ray Topography Study of Gan on A12O3

1998 ◽  
Vol 512 ◽  
Author(s):  
J. Chaudhuri ◽  
M. Hooe Ng ◽  
D. D. Koleske ◽  
A. E. Wickenden ◽  
R. L. Henry
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Dislocation Density ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
X Ray

ABSTRACTHigh resolution x-ray diffraction and x-ray topography study of GaN thin films, grown on sapphire (00.1) substrate by reduced pressure metalorganic vapor phase epitaxy under various conditions, were performed. An attempt was made to correlate the mobility in films with similar carrier concentration with the strain and dislocation density. X-ray topography revealed the defects present in the film.

Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy

1997 ◽  
Vol 71 (23) ◽  
pp. 3376-3378 ◽  
Author(s):  
G. Y. Zhang ◽  
Y. Z. Tong ◽  
Z. J. Yang ◽  
S. X. Jin ◽  
J. Li ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Relationship Of

Correlation between background carrier concentration and x‐ray linewidth for InGaAs/InP grown by vapor phase epitaxy

1984 ◽  
Vol 44 (6) ◽  
pp. 615-617 ◽  
Author(s):  
A. T. Macrander ◽  
S. N. G. Chu ◽  
K. E. Strege ◽  
A. F. Bloemeke ◽  
W. D. Johnston
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
X Ray
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