Growth of Si1−xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors

J. C. Sturm

doi:10.1116/1.585395

Growth of Si1−xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585395 ◽

1991 ◽

Vol 9 (4) ◽

pp. 2011 ◽

Cited By ~ 83

Author(s):

J. C. Sturm

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Thermal Chemical Vapor Deposition

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Mechanically and thermally stable Si‐Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

Journal of Applied Physics ◽

10.1063/1.347360 ◽

1991 ◽

Vol 69 (2) ◽

pp. 745-751 ◽

Cited By ~ 61

Author(s):

M. L. Green ◽

B. E. Weir ◽

D. Brasen ◽

Y. F. Hsieh ◽

G. Higashi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Thermally Stable ◽

Thermal Chemical Vapor Deposition

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High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition

Thin Solid Films ◽

10.1016/0040-6090(90)90403-z ◽

1990 ◽

Vol 184 (1-2) ◽

pp. 107-115 ◽

Cited By ~ 17

Author(s):

M.L. Green ◽

D. Brasen ◽

H. Temkin ◽

R.D. Yadvish ◽

T. Boone ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Gain ◽

Bipolar Transistors ◽

Thermal Chemical Vapor Deposition

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Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

IEEE Electron Device Letters ◽

10.1109/55.82068 ◽

1991 ◽

Vol 12 (6) ◽

pp. 303-305 ◽

Cited By ~ 50

Author(s):

J.C. Sturm ◽

E.J. Prinz ◽

C.W. Magee

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Electrical Characteristics ◽

Thermal Chemical Vapor Deposition

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Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.3343 ◽

1996 ◽

Vol 35 (Part 1, No. 6A) ◽

pp. 3343-3349 ◽

Cited By ~ 17

Author(s):

Hiroshi Ito ◽

Shoji Yamahata ◽

Naoteru Shigekawa ◽

Kenji Kurishima ◽

Yutaka Matsuoka

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

High Speed ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Carbon Doped ◽

Metalorganic Chemical

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Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04df01 ◽

2012 ◽

Vol 51 ◽

pp. 04DF01 ◽

Cited By ~ 2

Author(s):

Takuya Hoshi ◽

Hiroki Sugiyama ◽

Haruki Yokoyama ◽

Kenji Kurishima ◽

Minoru Ida

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Turn On ◽

Metalorganic Chemical

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Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

Applied Physics Letters ◽

10.1063/1.120305 ◽

1997 ◽

Vol 71 (22) ◽

pp. 3248-3250 ◽

Cited By ~ 14

Author(s):

C. C. Hsu ◽

Y. F. Yang ◽

H. J. Ou ◽

E. S. Yang ◽

H. B. Lo

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Carrier Gas ◽

Carbon Doped ◽

Metalorganic Chemical

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Metalorganic chemical vapor deposition of AlGaAs and InGaP heterojunction bipolar transistors

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)00893-4 ◽

2001 ◽

Vol 225 (2-4) ◽

pp. 397-404 ◽

Cited By ~ 5

Author(s):

N. Pan ◽

R.E. Welser ◽

C.R. Lutz ◽

P.M. DeLuca ◽

B. Han ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Metalorganic Chemical

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Low-turn-on voltage heterojunction bipolar transistors with a C-doped InxGa1-xAs1-ySby base grown by metalorganic chemical vapor deposition

10.7567/ssdm.2011.a-2-2 ◽

2011 ◽

Author(s):

T. Hoshi ◽

H. Sugiyama ◽

H. Yokoyama ◽

K. Kurishima ◽

M. Ida

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Turn On ◽

Metalorganic Chemical

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High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.10.231 ◽

2007 ◽

Vol 298 ◽

pp. 852-856 ◽

Cited By ~ 6

Author(s):

T. Chung ◽

D.M. Keogh ◽

J.-H. Ryou ◽

D. Yoo ◽

J. Limb ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Metalorganic Chemical

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Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.123990 ◽

1999 ◽

Vol 74 (20) ◽

pp. 2993-2995 ◽

Cited By ~ 9

Author(s):

Q. Yang ◽

D. Scott ◽

J. Miller ◽

P. Meyer ◽

H. C. Kuo ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Organic Chemical ◽

Precipitate Formation ◽

Carbon Doped ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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