Molecular beam epitaxial growth of high-quality GaAs on Si using a high-temperature in situ annealing process

1990 ◽  
Vol 8 (2) ◽  
pp. 250 ◽  
Author(s):  
Y. C. Kao
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Annealing Process ◽  
High Quality ◽  
Molecular Beam Epitaxial ◽  
Gaas On Si ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission

2006 ◽  
Vol 88 (19) ◽  
pp. 191115 ◽  
Author(s):  
Fumitaro Ishikawa ◽  
Michael Höricke ◽  
Uwe Jahn ◽  
Achim Trampert ◽  
Klaus H. Ploog
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Long Wavelength ◽  
Molecular Beam Epitaxial ◽  
Wavelength Emission ◽  
Molecular Beam Epitaxial Growth

Molecular-beam-epitaxial growth of GaAs on high-temperature hydrogen-annealed (100) silicon

1987 ◽  
Vol 23 (20) ◽  
pp. 1079 ◽  
Author(s):  
T.P. Humphreys ◽  
K. Das ◽  
S.M. Bedair ◽  
J.J. Wortman ◽  
N. Parikh ◽  
...  
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

scholarly journals Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates

1989 ◽  
Vol 66 (8) ◽  
pp. 3618-3621 ◽  
Author(s):  
J. E. Oh ◽  
P. K. Bhattacharya ◽  
Y. C. Chen ◽  
S. Tsukamoto
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substrates

1984 ◽  
Vol 45 (12) ◽  
pp. 1307-1309 ◽  
Author(s):  
J. P. Faurie ◽  
S. Sivananthan ◽  
M. Boukerche ◽  
J. Reno
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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