Engineering lateral quantum interference devices using electron beam lithography and molecular beam epitaxy

1989 ◽  
Vol 7 (6) ◽  
pp. 2015 ◽  
Author(s):  
D. R. Allee
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Electron Beam Lithography ◽  
Quantum Interference ◽  
Molecular Beam

Sub-100 nm Gate Length GaAs MESFETs Fabricated By Molecular Beam Epitaxy And Electron Beam Lithography

2005 ◽  
Author(s):  
D.R. Allee ◽  
P.R. de la Houssaye ◽  
D.G. Schlom ◽  
B.W. Langley ◽  
J.S. Harris ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Electron Beam Lithography ◽  
Molecular Beam ◽  
Gate Length

Germanium growth on electron beam lithography patterned Si3N4/Si(001) substrate using molecular beam epitaxy

2018 ◽  
Vol 437 ◽  
pp. 144-151 ◽  
Author(s):  
Subhendu Sinha Sarkar ◽  
Ajit K. Katiyar ◽  
Arijit Sarkar ◽  
Achintya Dhar ◽  
Arun Rudra ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Electron Beam Lithography ◽  
Molecular Beam

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap
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