Sub-100-nm gate length GaAs metal–semiconductor field-effect transistors and modulation-doped field-effect transistors fabricated by a combination of molecular-beam epitaxy and electron-beam lithography

1988 ◽  
Vol 6 (1) ◽  
pp. 328 ◽  
Author(s):  
D. R. Allee
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Electron Beam Lithography ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Gate Length

Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
M. J. Murphy ◽  
B. E. Foutz ◽  
K. Chu ◽  
H. Wu ◽  
W. Yeo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Microwave Measurements ◽  
Gate Length ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
A Current

AbstractHigh quality Ga-face and N-face AlGaN/GaN based heterostructures have been grown by plasma induced molecular beam epitaxy. By using Ga-face material we are able to fabricate conventional heterojunction field effect transistors. Because the N-face material confines electrons at a different heterojunction, the resulting transistors are called inverted. The Ga-face structures use a high temperature AIN nucleation layer to establish the polarity. Structures from these materials, relying only on polarization induced interface charge effects to create the two-dimensional electron gases, are used to confirm the polarity of the material as well as test the electrical properties of the layers. The resulting sheet concentrations of the two dimensional electron gases agree very well with the piezoelectric theory for this materials system. Hall mobilities of the two-dimensional gases for the N-face structures are as high as 1150 cm2/Vs and 3440 cm2/Vs for 300 K and 77 K respectively, while the Ga-face structures yield room temperature mobilities of 1190 cm2/Vs. Both structures were then fabricated into transistors and characterized. The inverted transistors, which were fabricated from the N-face material, yielded a maximum transconductance of 130 mS/mm and a current density of 905 mA/mm. Microwave measurements gave an ft of 7 GHz and an fmax of 12 GHz for a gate length of 1 μm. The normal transistors, fabricated from the Ga-face material, produced a maximum transconductance of 247 mS/mm and a current density of 938 mA/mm. Microwave measurements gave an ft of 50 GHz and an fmax of 97 GHz for a gate length of 0.25 μm. This shows that using plasma induced molecular beam epitaxy N-face and Ga(A1)-face AlGaN/GaN heterostructures can be grown with structural and electrical properties very suitable for high power field effect transistors.

Sub-100 nm Gate Length GaAs MESFETs Fabricated By Molecular Beam Epitaxy And Electron Beam Lithography

2005 ◽  
Author(s):  
D.R. Allee ◽  
P.R. de la Houssaye ◽  
D.G. Schlom ◽  
B.W. Langley ◽  
J.S. Harris ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Electron Beam Lithography ◽  
Molecular Beam ◽  
Gate Length

scholarly journals Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 840-845 ◽  
Author(s):  
M. J. Murphy ◽  
B. E. Foutz ◽  
K. Chu ◽  
H. Wu ◽  
W. Yeo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Microwave Measurements ◽  
Gate Length ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
A Current

High quality Ga-face and N-face AlGaN/GaN based heterostructures have been grown by plasma induced molecular beam epitaxy. By using Ga-face material we are able to fabricate conventional heterojunction field effect transistors. Because the N-face material confines electrons at a different heterojunction, the resulting transistors are called inverted. The Ga-face structures use a high temperature AlN nucleation layer to establish the polarity. Structures from these materials, relying only on polarization induced interface charge effects to create the two-dimensional electron gases, are used to confirm the polarity of the material as well as test the electrical properties of the layers. The resulting sheet concentrations of the two dimensional electron gases agree very well with the piezoelectric theory for this materials system. Hall mobilities of the two-dimensional gases for the N-face structures are as high as 1150 cm2/Vs and 3440 cm2/Vs for 300 K and 77 K respectively, while the Ga–face structures yield room temperature mobilities of 1190 cm2/Vs. Both structures were then fabricated into transistors and characterized. The inverted transistors, which were fabricated from the N-face material, yielded a maximum transconductance of 130 mS/mm and a current density of 905 mA/mm. Microwave measurements gave an ft of 7 GHz and an fmax of 12 GHz for a gate length of 1 µm. The normal transistors, fabricated from the Ga-face material, produced a maximum transconductance of 247 mS/mm and a current density of 938 mA/mm. Microwave measurements gave an ft of 50 GHz and an fmax of 97 GHz for a gate length of 0.25 µm. This shows that using plasma induced molecular beam epitaxy N-face and Ga(Al)-face AlGaN/GaN heterostructures can be grown with structural and electrical properties very suitable for high power field effect transistors.

Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy

1989 ◽  
Vol 54 (12) ◽  
pp. 1136-1138 ◽  
Author(s):  
J. B. Kuang ◽  
P. J. Tasker ◽  
Y. K. Chen ◽  
G. W. Wang ◽  
L. F. Eastman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

2017 ◽  
Vol 10 (7) ◽  
pp. 071101 ◽  
Author(s):  
Elaheh Ahmadi ◽  
Onur S. Koksaldi ◽  
Xun Zheng ◽  
Tom Mates ◽  
Yuichi Oshima ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Fabrication of metal‐epitaxial insulator‐semiconductor field‐effect transistors using molecular beam epitaxy of CaF2on Si

1984 ◽  
Vol 45 (8) ◽  
pp. 907-909 ◽  
Author(s):  
T. P. Smith ◽  
Julia M. Phillips ◽  
W. M. Augustyniak ◽  
P. J. Stiles
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors
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