Summary Abstract: Focused ion beam implantation doping in GaAs/AlGaAs molecular‐beam epitaxy growth

1987 ◽  
Vol 5 (4) ◽  
pp. 1552-1553
Author(s):  
H. Hashimoto ◽  
E. Miyauchi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Ion Beam Implantation

Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 771-774 ◽  
Author(s):  
Masayuki Itoh ◽  
Tadashi Saku ◽  
Toshimasa Fujisawa ◽  
Yoshiro Hirayama ◽  
Seigo Tarucha
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Molecular Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Implantation

Low temperature photoluminescence from GaAs impinged by mass-separated low-energy C+ ion beams during molecular beam epitaxy

1993 ◽  
Vol 316 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Stefan Winter ◽  
Shinji Kimura ◽  
Yushin Tsai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Ion Beams ◽  
Beam Current Density ◽  
Molecular Beam Epitaxy Growth ◽  
Spectral Evolution ◽  
Activation Rate

ABSTRACTC-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30–500 eV) energies (EC+) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC+ for EC+ lower than 170 eV. It was explicitly demonstrated that the most effective Ec+ to establish highest activation rate is located at ~170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC+. This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration ( |NA-ND| ) for EC+=170 eV. For EC+ higher than ~170 eV, increasing EC+ was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC+.

Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy

2017 ◽  
Vol 470 ◽  
pp. 46-50 ◽  
Author(s):  
Sven Scholz ◽  
Rüdiger Schott ◽  
Patrick A. Labud ◽  
Christoph Somsen ◽  
Dirk Reuter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Inas Nanowires

Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation

1987 ◽  
Vol 26 (Part 2, No. 4) ◽  
pp. L234-L236 ◽  
Author(s):  
Tetsuo Morita ◽  
Akira Takamori ◽  
Hiroshi Arimoto ◽  
Eizo Miyauchi ◽  
Hisao Hashimoto
Keyword(s):  
Molecular Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Molecular Beam Epitaxial ◽  
Ion Beam Implantation
Sign in / Sign up

Export Citation Format

Share Document