Sub-100-nm x-ray mask technology using focused-ion-beam lithography

1989 ◽  
Vol 7 (6) ◽  
pp. 1583 ◽  
Author(s):  
W. Chu
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
X Ray ◽  
Ion Beam Lithography

Single-Step 3D Nanofabrication of Kinoform Optics via Gray-Scale Focused Ion Beam Lithography for Efficient X-Ray Focusing

2015 ◽  
Vol 3 (6) ◽  
pp. 792-800 ◽  
Author(s):  
Kahraman Keskinbora ◽  
Corinne Grévent ◽  
Michael Hirscher ◽  
Markus Weigand ◽  
Gisela Schütz
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Gray Scale ◽  
X Ray ◽  
Ion Beam Lithography

3D Observation of Elemental Distribution of Si-Device using a Dedicated FIB/STEM System

2005 ◽  
Author(s):  
T. Yaguchi ◽  
M. Konno ◽  
T. Kamino ◽  
M. Ogasawara ◽  
K. Kaji ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Elemental Distribution ◽  
Multivariate Statistical ◽  
X Ray ◽  
Sample Rotation ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Elemental Maps

Abstract A technique for preparation of a pillar shaped sample and its multi-directional observation of the sample using a focused ion beam (FIB) / scanning transmission electron microscopy (STEM) system has been developed. The system employs an FIB/STEM compatible sample rotation holder with a specially designed rotation mechanism, which allows the sample to be rotated 360 degrees [1-3]. This technique was used for the three dimensional (3D) elemental mapping of a contact plug of a Si device in 90 nm technology. A specimen containing a contact plug was shaped to a pillar sample with a cross section of 200 nm x 200 nm and a 5 um length. Elemental analysis was performed with a 200 kV HD-2300 STEM equipped with the EDAX genesis Energy dispersive X-ray spectroscopy (EDX) system. Spectrum imaging combined with multivariate statistical analysis (MSA) [4, 5] was used to enhance the weak X-ray signals of the doped area, which contain a low concentration of As-K. The distributions of elements, especially the dopant As, were successfully enhanced by MSA. The elemental maps were .. reconstructed from the maps.

Oxidation of Alloy-X in Subcritical, Transition, and Supercritical Water

CORROSION ◽  
10.5006/3881 ◽  
2021 ◽  
Author(s):  
Zachary Karmiol ◽  
Dev Chidambaram
Keyword(s):  
Supercritical Water ◽  
Photoelectron Spectroscopy ◽  
Focused Ion Beam ◽  
Elevated Temperatures ◽  
Subcritical Water ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nickel Based Superalloy ◽  
Before And After

This work investigates the oxidation of a nickel based superalloy, namely Alloy X, in water at elevated temperatures: subcritical water at 261°C and 27 MPa, the transition between subcritical and supercritical water at 374°C and 27 MPa, and supercritical water at 380°C and 27 MPa for 100 hours. The morphology of the sample surfaces were studied using scanning electron microscopy coupled with focused ion beam milling, and the surface chemistry was investigated using X-ray diffraction, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy before and after exposure studies. Surfaces of all samples were identified to comprise of a ferrite spinel containing aluminum.

High Conductivity FIB Deposited Metal

1995 ◽  
Vol 396 ◽  
Author(s):  
P.G. Blauner ◽  
A. Wagner
Keyword(s):  
Focused Ion Beam ◽  
High Efficiency ◽  
Ion Beam ◽  
Deposition Process ◽  
Gold Deposition ◽  
X Ray ◽  
Annealing Step ◽  
Deposited Metal ◽  
Major Application ◽  
Deposition Processes

AbstractThe ion beam induced metal deposition processes now employed by commercial focused ion beam (FIB) tools all demonstrate less than optimal characteristics for use in circuit repair, a major application of these tools. In particular, the processes have low efficiencies, the metals produced have poor conductivity, and some form of clean up is generally required to remove excess material surrounding the repair site. The gold deposition process developed for x-ray mask repair, in contrast, exhibits efficiencies 10-50 times higher with significantly less material deposited in unwanted areas. Unfortunately, the conductivity of the gold is even poorer than that of materials now used for FIB circuit repair.In this paper, an annealing step which improves the conductivity of FIB deposited Au is described. Results are presented demonstrating resistivities of 5-15 μΩ-cm while maintaining the high efficiency of the gold deposition process. The suitability of the process for use in FIB circuit repair is discussed.

Microstructures of GaAs fabricated by finely focused ion beam lithography

1989 ◽  
Vol 9 (1-4) ◽  
pp. 277-279 ◽  
Author(s):  
Takao Shiokawa ◽  
Pil Hyon Kim ◽  
Manabu Hamagaki ◽  
Tamio Hara ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography
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