Summary Abstract: Effect of electric field on the exciton transition energies and oscillator strengths of undoped GaAs–AlGaAs quantum well structures determined by photocurrent spectroscopy

1988 ◽  
Vol 6 (2) ◽  
pp. 649
Author(s):  
P. W. Yu
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Oscillator Strengths ◽  
Exciton Transition ◽  
Quantum Well Structures ◽  
Transition Energies ◽  
Photocurrent Spectroscopy ◽  
Undoped Gaas

Electric field dependence of exciton transition energies in GaAs-AlxGa1−xAs quantum wells studied by photocurrent spectroscopy

1988 ◽  
Vol 38 (11) ◽  
pp. 7796-7799 ◽  
Author(s):  
P. W. Yu ◽  
G. D. Sanders ◽  
K. R. Evans ◽  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Field Dependence ◽  
Exciton Transition ◽  
Transition Energies ◽  
Electric Field Dependence ◽  
Photocurrent Spectroscopy

Interband transitions dependent on indium concentration in Ga1−xInxAs/GaAs asymmetric triple quantum wells

2018 ◽  
Vol 32 (05) ◽  
pp. 1850052 ◽  
Author(s):  
B. O. Alaydin ◽  
E. Ozturk ◽  
S. Elagoz
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electronic Properties ◽  
Radiative Decay ◽  
Interband Transition ◽  
Energy Levels ◽  
Oscillator Strengths ◽  
Quantum Well Structures ◽  
Transition Energies ◽  
Decay Times

In this paper, the optical and electronic properties of asymmetric triple quantum well (ATQW) structures are studied depending on the indium concentrations while quantum well (QW) thicknesses and barrier widths are kept constant. Calculation of electronic properties are done within the framework of the effective mass approximation. The indium concentrations in left quantum well (LQW) and right quantum well (RQW) are varied in order to see the change of energy levels. Then, interband transition energies, wavelengths, oscillator strengths and radiative decay times are determined depending on barrier height. The scope of this study, for the first time in the literature, covers converged interband transition energies for the asymmetric quantum well structures.

Photovoltaic spectra of undoped GaAsAl0.25Ga0.75As multiple quantum well structures: Correlation with photoluminescence

1986 ◽  
Vol 58 (1) ◽  
pp. 37-40 ◽  
Author(s):  
P.W. Yu ◽  
D.C. Reynolds ◽  
K.K. Bajaj ◽  
C.W. Litton ◽  
J. Singh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Undoped Gaas

Electric field dependence of optical absorption near the band gap of quantum-well structures

1985 ◽  
Vol 32 (2) ◽  
pp. 1043-1060 ◽  
Author(s):  
D. A. B. Miller ◽  
D. S. Chemla ◽  
T. C. Damen ◽  
A. C. Gossard ◽  
W. Wiegmann ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Band Gap ◽  
Field Dependence ◽  
Quantum Well Structures ◽  
Electric Field Dependence

Electric-field-induced exciton transport in coupled quantum well structures

1996 ◽  
Vol 40 (1-8) ◽  
pp. 429-431 ◽  
Author(s):  
M Hagn ◽  
A Zrenner ◽  
G Böhm ◽  
G Weimann
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Exciton Transport ◽  
Coupled Quantum Well
Sign in / Sign up

Export Citation Format

Share Document