Effect of electric field on the sharp photoluminescence spectra of undoped GaAs–Al0.25Ga0.75As multiple quantum well structures

1985 ◽  
Vol 3 (2) ◽  
pp. 624 ◽  
Author(s):  
P. W. Yu
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Photoluminescence Spectra ◽  
Quantum Well Structures ◽  
Undoped Gaas

Photovoltaic spectra of undoped GaAsAl0.25Ga0.75As multiple quantum well structures: Correlation with photoluminescence

1986 ◽  
Vol 58 (1) ◽  
pp. 37-40 ◽  
Author(s):  
P.W. Yu ◽  
D.C. Reynolds ◽  
K.K. Bajaj ◽  
C.W. Litton ◽  
J. Singh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Undoped Gaas

Sharp-line photoluminescence spectra from GaAs-GaAlAs multiple-quantum-well structures

1984 ◽  
Vol 29 (12) ◽  
pp. 7038-7041 ◽  
Author(s):  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
C. W. Litton ◽  
P. W. Yu ◽  
W. T. Masselink ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Photoluminescence Spectra ◽  
Sharp Line ◽  
Quantum Well Structures

scholarly journals The impact of electron and hole trapping coefficient on nonlinear phenomena in photorefractive multiple quantum well structures

2016 ◽  
Vol 8 (4) ◽  
pp. 125
Author(s):  
Blazej Jablonski ◽  
Andrzej Ziolkowski ◽  
Agnieszka Branecka ◽  
Ewa Weinert-Raczka
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Nonlinear Phenomena ◽  
Multiple Quantum ◽  
Wave Mixing ◽  
Quantum Well Structures ◽  
Hole Trapping ◽  
Two Wave Mixing

Semiconductor photorefractive quantum wells belong to materials with strong optical nonlinearity. One of the parameters that may affect the course of nonlinear phenomena in these materials is the electron and hole trapping coefficient. We present the results of a numerical analysis aimed to find out, how electric field-dependent trapping coefficients affect the process of space-charge field formation in multiple quantum wells in the phenomenon of photorefractive two-wave mixing. Full Text: PDF ReferencesQ. Wang, R. M. Brubaker, D. D. Nolte and M. R. Melloch, "Photorefractive quantum wells: transverse Franz-Keldysh geometry," J. Opt. Soc. Am. B 9, 1626 (1992) CrossRef D.D. Nolte and M.R. Melloch, in: Photorefractive effects and Materials, Chap.6, ed. by D. D. Nolte (Kluwer Academic, Boston, 1995) CrossRef D.D. Nolte, "Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications"", J. Appl. Phys. 85, 6259 (1999) CrossRef Q.Wang, R. M. Brubaker and D. D. Nolte, "Photorefractive phase shift induced by hot-electron transport: Multiple-quantum-well structures", J. Opt. Soc. Am. B 9 (1994) 1773. CrossRef V. Ya. Prinz, S. N. Rechkunov, "Influence of a Strong Electric Field on the Carrier Capture by nonradiative Deep-Level Centers in GaAs", Phys. Stat. Sol. (b) 118, 159 (1983) CrossRef S.M. Sze, Physics of Semiconductors Devices, second ed., Wiley, New York, 1981 (Chapter 10) DirectLink B. Jablonski, "Impact of donor compensation ratio on photorefractive two-wave mixing dynamics in multiple quantum wells structures", JNOPM 23, 1450029 (2014) CrossRef

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