Arsenic- and metal-induced GaAs interface states by low-energy cathodoluminescence spectroscopy

1988 ◽  
Vol 6 (4) ◽  
pp. 1397 ◽  
Author(s):  
R. E. Viturro
Keyword(s):  
Interface States ◽  
Low Energy ◽  
Cathodoluminescence Spectroscopy

Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing

2000 ◽  
Vol 77 (21) ◽  
pp. 3450-3452 ◽  
Author(s):  
E. Kapetanakis ◽  
P. Normand ◽  
D. Tsoukalas ◽  
K. Beltsios ◽  
J. Stoemenos ◽  
...  
Keyword(s):  
Interface States ◽  
Low Energy ◽  
Charge Storage ◽  
Si Nanocrystal ◽  
Nanocrystal Memory

Low-energy scanning cathodoluminescence spectroscopy and microscopy of porous silicon layers

1993 ◽  
Vol 57 (1-6) ◽  
pp. 315-319 ◽  
Author(s):  
M. Gu ◽  
C. Syrykh ◽  
A. Halimaoui ◽  
Ph. Dumas ◽  
F. Salvan
Keyword(s):  
Porous Silicon ◽  
Low Energy ◽  
Cathodoluminescence Spectroscopy

Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces

1999 ◽  
Vol 17 (6) ◽  
pp. 3437-3442 ◽  
Author(s):  
T. M. Levin ◽  
A. P. Young ◽  
J. Schäfer ◽  
L. J. Brillson ◽  
J. D. MacKenzie ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Energy ◽  
Cathodoluminescence Spectroscopy ◽  
Erbium Doped

Low energy electron emission from surface-interface states of SiO2:Ge films

2014 ◽  
Author(s):  
A. F. Zatsepin ◽  
E. A. Buntov ◽  
A. P. Mikhailovich ◽  
A. I. Slesarev ◽  
H.-J. Fitting ◽  
...  
Keyword(s):  
Electron Emission ◽  
Interface States ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron

Ultrathin Silicon Oxide and Nitride – Silicon Interface States

1999 ◽  
Vol 567 ◽  
Author(s):  
L.J. Brillson ◽  
A.P. Young ◽  
J. Schäfer ◽  
H. Niimi ◽  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Plasma Deposition ◽  
Electronic States ◽  
Low Energy ◽  
Optical Transitions ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Cathodoluminescence Spectroscopy ◽  
Silicon Interface

ABSTRACTLocal electronic states at nanometer-thick silicon oxide and nitride films on Si can be studied on an unprecedented scale using low - energy cathodoluminescence spectroscopy to observe optical transitions of defect bonding arrangements at ultrathin film interfaces prepared by low -temperature plasma deposition. Our results illustrate significant differences in the dependence of specific defects at the oxide versus nitride interfaces on thermal annealing and hydrogenation.

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