Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces

1999 ◽  
Vol 17 (6) ◽  
pp. 3437-3442 ◽  
Author(s):  
T. M. Levin ◽  
A. P. Young ◽  
J. Schäfer ◽  
L. J. Brillson ◽  
J. D. MacKenzie ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Energy ◽  
Cathodoluminescence Spectroscopy ◽  
Erbium Doped

Low-energy ion beam-based deposition of gallium nitride

2016 ◽  
Vol 87 (2) ◽  
pp. 02C103 ◽  
Author(s):  
M. R. Vasquez ◽  
M. Wada
Keyword(s):  
Gallium Nitride ◽  
Ion Beam ◽  
Low Energy

Visible and Infrared Emission from GaN:Er Thin Films Grown by Sputtering

1999 ◽  
Vol 595 ◽  
Author(s):  
Hong Chen ◽  
K. Gurumurugan ◽  
M.E. Kordesch ◽  
W.M. Jadwisienczak ◽  
H.J. Lozykowski
Keyword(s):  
Electron Excitation ◽  
Infrared Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Yellow Band ◽  
X Ray ◽  
Band Emission ◽  
Cathodoluminescence Spectroscopy ◽  
Erbium Doped ◽  
Er Doped

AbstractErbium-doped films were grown on sapphire and silicon substrates by reactive sputtering, with different Er concentrations in the film. GaN films deposited at 800 K were determined to be polycrystalline by x-ray diffraction analysis, and retained their polycrystalline structure after annealing in nitrogen at 1250 K. The Er-doped films showed optical transmission beginning at about 360 nm, and the Er dose and film purity were determined with Rutherford backscattering spectroscopy. Photoluminescence and cathodoluminescence spectroscopy showed sharp emission lines corresponding to Er 3+ intra 4fn shell transitions over the range from 9 – 300 K. At above-bandgap optical and electron excitation, the 4S3/2 and 4F9/2 transition dominate, and are superposed on the “yellow band” emission. The infrared emission line at 1543 nm, corresponding to the Er 4I⅓ to 4I3/2 transition is also observed.

Near infrared (1.54 μm) luminescence properties of erbium doped gallium nitride

2000 ◽  
Vol 303-304 ◽  
pp. 331-335 ◽  
Author(s):  
U Hömmerich ◽  
J.T Seo ◽  
Myo Thaik ◽  
C.R Abernathy ◽  
J.D MacKenzie ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Near Infrared ◽  
Luminescence Properties ◽  
Erbium Doped

Low energy electron beam induced damage on gallium nitride based materials

2012 ◽  
Vol 9 (7) ◽  
pp. 1563-1565 ◽  
Author(s):  
Henri Nykänen ◽  
Päivi Mattila ◽  
Sami Suihkonen ◽  
Juha Riikonen ◽  
Markku Sopanen
Keyword(s):  
Electron Beam ◽  
Gallium Nitride ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron

Low-energy scanning cathodoluminescence spectroscopy and microscopy of porous silicon layers

1993 ◽  
Vol 57 (1-6) ◽  
pp. 315-319 ◽  
Author(s):  
M. Gu ◽  
C. Syrykh ◽  
A. Halimaoui ◽  
Ph. Dumas ◽  
F. Salvan
Keyword(s):  
Porous Silicon ◽  
Low Energy ◽  
Cathodoluminescence Spectroscopy

Low-energy ion assisted deposition of epitaxial gallium nitride films

1999 ◽  
Vol 148 (1-4) ◽  
pp. 406-410 ◽  
Author(s):  
J.W Gerlach ◽  
D Schrupp ◽  
K Volz ◽  
M Zeitler ◽  
B Rauschenbach ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Energy
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