Summary Abstract: Aharonov–Bohm effect in a molecular beam epitaxially grown double quantum well

M. R. Melloch

doi:10.1116/1.583589

Summary Abstract: Aharonov–Bohm effect in a molecular beam epitaxially grown double quantum well

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583589 ◽

1986 ◽

Vol 4 (2) ◽

pp. 653 ◽

Cited By ~ 1

Author(s):

M. R. Melloch

Keyword(s):

Quantum Well ◽

Molecular Beam ◽

Double Quantum ◽

Double Quantum Well ◽

Bohm Effect ◽

Aharonov Bohm

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Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442706 ◽

2005 ◽

Author(s):

T.S. Lay ◽

P.P. Shen ◽

E.Y. Lin ◽

K.M. Kong ◽

L.P. Chen ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Absorption Spectra ◽

Molecular Beam ◽

Double Quantum ◽

Differential Absorption ◽

Quantum Well Structures ◽

Double Quantum Well

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Independently contacted double quantum well structure fabricated by molecular beam epitaxial regrowth

Applied Physics Letters ◽

10.1063/1.113407 ◽

1995 ◽

Vol 66 (7) ◽

pp. 848-850 ◽

Cited By ~ 4

Author(s):

N. K. Patel ◽

M. P. Grimshaw ◽

J. H. Burroughes ◽

M. L. Leadbeater ◽

D. A. Ritchie ◽

...

Keyword(s):

Quantum Well ◽

Molecular Beam ◽

Double Quantum ◽

Molecular Beam Epitaxial ◽

Quantum Well Structure ◽

Epitaxial Regrowth ◽

Double Quantum Well

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Aharonov-Bohm Ring Interferometer on the Basis of 2D Electron Gas in a Double Quantum Well

10.1063/1.1994181 ◽

2005 ◽

Author(s):

D. V. Nomokonov

Keyword(s):

Quantum Well ◽

Electron Gas ◽

Double Quantum ◽

2D Electron Gas ◽

Ring Interferometer ◽

Double Quantum Well ◽

Aharonov Bohm

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Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.05fg01 ◽

2016 ◽

Vol 55 (5S) ◽

pp. 05FG01 ◽

Cited By ~ 8

Author(s):

Tobias Wecker ◽

Gordon Callsen ◽

Axel Hoffmann ◽

Dirk Reuter ◽

Donat J. As

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Excited States ◽

Molecular Beam ◽

Double Quantum ◽

Photoluminescence Excitation ◽

Double Quantum Well ◽

Cubic Gan

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Gas source molecular-beam epitaxial growth of TlInGaAsN double quantum well light emitting diode structures and thallium incorporation characteristics

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.08.013 ◽

2006 ◽

Vol 295 (2) ◽

pp. 133-136 ◽

Cited By ~ 11

Author(s):

T. Matsumoto ◽

D. Krishnamurthy ◽

A. Fujiwara ◽

S. Hasegawa ◽

H. Asahi

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Light Emitting Diode ◽

Double Quantum ◽

Light Emitting ◽

Molecular Beam Epitaxial ◽

Gas Source ◽

Double Quantum Well ◽

Molecular Beam Epitaxial Growth

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Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/aba379 ◽

2020 ◽

Vol 59 (8) ◽

pp. 080903

Author(s):

Ayaka Shinkawa ◽

Minoru Wakiya ◽

Yuki Maeda ◽

Takahiro Tsukamoto ◽

Nobumitsu Hirose ◽

...

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Thermionic Emission ◽

Resonant Tunneling Diode ◽

Double Quantum ◽

High Resonance ◽

Tunneling Diode ◽

Double Quantum Well ◽

Resonance Current

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Optical absorption in the terahertz region in HgTe/HgCd(Mn)Te double quantum well structures with a topological phase and structural inversion asymmetry

Surface Science ◽

10.1016/j.susc.2020.121780 ◽

2021 ◽

Vol 706 ◽

pp. 121780

Author(s):

M. Marchewka ◽

P. Śliż

Keyword(s):

Optical Absorption ◽

Quantum Well ◽

Double Quantum ◽

Topological Phase ◽

Quantum Well Structures ◽

Terahertz Region ◽

Double Quantum Well ◽

Structural Inversion ◽

Inversion Asymmetry

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GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well ◽

Gate Structure ◽

Gan On Si

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Characteristics of a Dilute Nitride InGaAsN Double Quantum Well Laser at 1047 nm

2020 IEEE 26th International Symposium for Design and Technology in Electronic Packaging (SIITME) ◽

10.1109/siitme50350.2020.9292223 ◽

2020 ◽

Author(s):

Andrei Dragulinescu ◽

Mihail Dumitrescu

Keyword(s):

Quantum Well ◽

Double Quantum ◽

Dilute Nitride ◽

Quantum Well Laser ◽

Double Quantum Well

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Transport hysteresis in AlGaAs/GaAs double quantum well systems with InAs quantum dots

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/19/50/506207 ◽

2007 ◽

Vol 19 (50) ◽

pp. 506207 ◽

Cited By ~ 2

Author(s):

E S Kannan ◽

Gil-Ho Kim ◽

I Farrer ◽

D A Ritchie

Keyword(s):

Quantum Dots ◽

Quantum Well ◽

Double Quantum ◽

Inas Quantum Dots ◽

Double Quantum Well

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