Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces

1986 ◽  
Vol 4 (4) ◽  
pp. 1130 ◽  
Author(s):  
Hideki Hasegawa
Keyword(s):  
State Model ◽  
Semiconductor Interfaces ◽  
Gap State

Two-Dimensional Device Simulator VENUS-2D/B for Amorphous Silicon Thin-Film Transistors Using a Gap-State Model

1991 ◽  
Vol 30 (Part 2, No. 2A) ◽  
pp. L145-L148 ◽  
Author(s):  
Tatsumi Ishizuka ◽  
Kazuki Sumino ◽  
Yasuroh Iriye ◽  
Masataka Hirose
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
State Model ◽  
Two Dimensional ◽  
Silicon Thin Film ◽  
Gap State

Extending the metal-induced gap state model to include silicides

Scilight ◽  
2020 ◽  
Vol 2020 (30) ◽  
pp. 301104
Author(s):  
Meeri Kim
Keyword(s):  
State Model ◽  
Gap State

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

High-resolution z-contrast imaging of semiconductor interfaces

1989 ◽  
Vol 47 ◽  
pp. 468-469
Author(s):  
S. J. Pennycook
Keyword(s):  
High Resolution ◽  
Phase Contrast ◽  
Contrast Imaging ◽  
Compositional Modulation ◽  
Semiconductor Interfaces ◽  
Complex Figure ◽  
Thin Region ◽  
Stem Image ◽  
Annular Detector ◽  
Z Contrast

Using a high-angle annular detector on a high-resolution STEM it is possible to form incoherent images of a crystal lattice characterized by strong atomic number or Z contrast. Figure 1 shows an epitaxial Ge film on Si(100) grown by oxidation of Ge-implanted Si. The image was obtained using a VG Microscopes' HB501 STEM equipped with an ultrahigh resolution polepiece (Cs ∽1.2 mm, demonstrated probe FWHM intensity ∽0.22 nm). In both crystals the lattice is resolved but that of Ge shows much brighter allowing the interface to be located exactly and interface steps to be resolved (arrowed). The interface was indistinguishable in the phase-contrast STEM image from the same region, and even at higher resolution the location of the interface is complex. Figure 2 shows a thin region of an MBE-grown ultrathin super-lattice (Si8Ge2)100. The expected compositional modulation would show as one bright row of dots from the 2 Ge monolayers separated by 4 rows of lighter Si columns. The image shows clearly that strain-induced interdiffusion has occurred on the monolayer scale.

CRITICAL STATE MODEL FOR CUPRATE SUPERCONDUCTORS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-2231-C8-2232
Author(s):  
A. M. Portis ◽  
M. Stalder ◽  
G. Stefanicki ◽  
F. Waldner ◽  
M. Warden
Keyword(s):  
Critical State ◽  
Cuprate Superconductors ◽  
Critical State Model ◽  
State Model

Reforms and transformation paths in comparative perspective: challenging comparative views on East European and Chinese reforms

2005 ◽  
Vol 55 (2) ◽  
pp. 171-199 ◽  
Author(s):  
Mária Csanádi
Keyword(s):  
Power Distribution ◽  
State Power ◽  
State Model ◽  
Comparative Perspective ◽  
Dynamic Background ◽  
East European ◽  
Structural Context ◽  
Political Conditions ◽  
Party State ◽  
Chinese Reforms

Reforms, in view of a comparative party-state model, become the instruments of self-reproduction and self-destruction of party-state power. The specific patterns of power distribution imply different development and transformation paths through different instruments of self-reproduction. This approach also points to the structural and dynamic background of the differences in the location, sequence, speed and political conditions of reforms during the operation and transformation of party-states. In view of the model the paper points to the inconsistencies that emerge in the comparative reform literature concerning the evaluation and strategies of reforms disconnected from their systemic-structural context.

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