Extending the metal-induced gap state model to include silicides

Scilight ◽  
2020 ◽  
Vol 2020 (30) ◽  
pp. 301104
Author(s):  
Meeri Kim
Keyword(s):  
State Model ◽  
Gap State

Two-Dimensional Device Simulator VENUS-2D/B for Amorphous Silicon Thin-Film Transistors Using a Gap-State Model

1991 ◽  
Vol 30 (Part 2, No. 2A) ◽  
pp. L145-L148 ◽  
Author(s):  
Tatsumi Ishizuka ◽  
Kazuki Sumino ◽  
Yasuroh Iriye ◽  
Masataka Hirose
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
State Model ◽  
Two Dimensional ◽  
Silicon Thin Film ◽  
Gap State

CRITICAL STATE MODEL FOR CUPRATE SUPERCONDUCTORS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-2231-C8-2232
Author(s):  
A. M. Portis ◽  
M. Stalder ◽  
G. Stefanicki ◽  
F. Waldner ◽  
M. Warden
Keyword(s):  
Critical State ◽  
Cuprate Superconductors ◽  
Critical State Model ◽  
State Model

Reforms and transformation paths in comparative perspective: challenging comparative views on East European and Chinese reforms

2005 ◽  
Vol 55 (2) ◽  
pp. 171-199 ◽  
Author(s):  
Mária Csanádi
Keyword(s):  
Power Distribution ◽  
State Power ◽  
State Model ◽  
Comparative Perspective ◽  
Dynamic Background ◽  
East European ◽  
Structural Context ◽  
Political Conditions ◽  
Party State ◽  
Chinese Reforms

Reforms, in view of a comparative party-state model, become the instruments of self-reproduction and self-destruction of party-state power. The specific patterns of power distribution imply different development and transformation paths through different instruments of self-reproduction. This approach also points to the structural and dynamic background of the differences in the location, sequence, speed and political conditions of reforms during the operation and transformation of party-states. In view of the model the paper points to the inconsistencies that emerge in the comparative reform literature concerning the evaluation and strategies of reforms disconnected from their systemic-structural context.

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