Electric field effects in excitonic absorption for high‐quality InGaAs/InAlAs multiple‐quantum‐well structures

1988 ◽  
Vol 64 (5) ◽  
pp. 2795-2797 ◽  
Author(s):  
S. Nojima ◽  
Y. Kawamura ◽  
K. Wakita ◽  
O. Mikami
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Electric Field Effects ◽  
Quantum Well Structures ◽  
Field Effects ◽  
Excitonic Absorption

MBE growth and characterization of high-quality strained multiple quantum well structures

1997 ◽  
Vol 175-176 ◽  
pp. 873-876 ◽  
Author(s):  
A.Z. Li ◽  
Y. Zhao ◽  
Y.L. Zheng ◽  
G.T. Chen ◽  
G.P. Ru ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Mbe Growth ◽  
Quantum Well Structures

Excitonic absorption saturation in ternary alloy AlxGa1−xAs/AlAs multiple‐quantum‐well structures

1991 ◽  
Vol 59 (12) ◽  
pp. 1497-1499 ◽  
Author(s):  
M. Dabbicco ◽  
R. Cingolani ◽  
M. Ferrara ◽  
K. Ploog ◽  
A. Fisher
Keyword(s):  
Quantum Well ◽  
Ternary Alloy ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Absorption Saturation ◽  
Excitonic Absorption

Growth and Characterization Of GexSi1−x/ Si Multiple Quantum Well Structures

1992 ◽  
Vol 263 ◽  
Author(s):  
D.W. Greve ◽  
R. Misra ◽  
M.A. Capano ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Small Variation ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
High Quality ◽  
Quantum Well Structures ◽  
X Ray

ABSTRACTWe report on the growth and characterization of multiple quantum well structures by UHV/ CVD epitaxy. X- ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

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