X-ray characterization of single-crystal Fe films on GaAs grown by molecular beam epitaxy

1985 ◽  
Vol 3 (2) ◽  
pp. 718 ◽  
Author(s):  
Syed B. Qadri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
X Ray

scholarly journals Gas‐source molecular‐beam epitaxy using Si2H6and GeH4and x‐ray characterization of Si1−xGex(0≤x≤0.33) alloys

1992 ◽  
Vol 71 (10) ◽  
pp. 4916-4919 ◽  
Author(s):  
S. H. Li ◽  
S. W. Chung ◽  
J. K. Rhee ◽  
P. K. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
Gas Source

Characterization of molecular beam epitaxy grown CdF2 layers by x‐ray diffraction and CaF2:Sm photoluminescence probe

1995 ◽  
Vol 13 (6) ◽  
pp. 2703-2708 ◽  
Author(s):  
N. S. Sokolov ◽  
N. N. Faleev ◽  
S. V. Gastev ◽  
N. L. Yakovlev ◽  
A. Izumi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray

Fabrication and characterization of ZnMgO nanowalls grown on 4H-SiC by molecular beam epitaxy

2019 ◽  
Vol 52 (1) ◽  
pp. 168-170
Author(s):  
Mieczyslaw A. Pietrzyk ◽  
Aleksandra Wierzbicka ◽  
Marcin Stachowicz ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fabrication And Characterization

Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H-SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X-ray diffraction measurements.

scholarly journals Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Yu-Chiao Lin ◽  
Ikai Lo ◽  
Hui-Chun Shih ◽  
Mitch M. C. Chou ◽  
D. M. Schaadt
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Anisotropic Growth ◽  
X Ray Diffraction ◽  
X Ray

M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0]. According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5GaO4 would influence the surface morphology and crystal quality.

Growth and Optical Characterization of ZnMnTe Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
John L. Reno ◽  
Eric D. Jones ◽  
Eugene L. Venturini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Phase ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Blende ◽  
Wurtzite Crystal Structure ◽  
Peak Energy

ABSTRACTWe have successfully grown ZnMnTe alloys by molecular beam epitaxy using GaAs as a substrate. Bulk MnTe has the wurtzite crystal structure but the structural phase of the material was confirmed to be zinc-blende by standard θ-2θ x-ray diffraction techniques. The composition was also determined using x-ray diffraction techniques. Manganese cancentration was also estimated from magnetization measurements taken as a function of temperature. Magneto-luminescence studies were performed at 1.4K on the acceptor-bound exciton in the semimagnetic semiconductor ZnMnTe alloys. As expected, the photoluminescence peak energy decreased with increasing magnetic field.

The Nucleation and Growth of Germanium on (1102) Sapphire Deposited by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
David J. Godbey ◽  
Mark E. Twigg
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Line Width ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
X Ray ◽  
Germanium Film ◽  
Germanium Films ◽  
First Time

Single crystal undoped germanium has been grown successfully for the first time on (1102) sapphire [1,2]. Germanium was found to grow (110) with an in plane registry of Ge(111)/Al203(1012) [1]. When a 2μm germanium film was grown on (1102) sapphire at 800°C and after a substrate preanneal of 1400°C, the X-ray line width of the Ge(220) reflection was measured to be 230 arcseconds [2]. Strain was observed only in germanium films that were thinner than 40 nm [2].

Structural and morphological characterization of molecular beam epitaxy grown Si/Ge multilayer using x-ray scattering techniques

2011 ◽  
Vol 110 (10) ◽  
pp. 102204 ◽  
Author(s):  
M. Sharma ◽  
M. K. Sanyal ◽  
M. K. Mukhopadhyay ◽  
M. K. Bera ◽  
B. Saha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Morphological Characterization ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering
Sign in / Sign up

Export Citation Format

Share Document