Ga(As,P) strained-layer superlattices: A ternary semiconductor with independently adjustable band gap and lattice constant

1983 ◽  
Vol 1 (2) ◽  
pp. 383 ◽  
Author(s):  
P. L. Gourley
Keyword(s):  
Band Gap ◽  
Lattice Constant ◽  
Strained Layer ◽  
Ternary Semiconductor ◽  
Strained Layer Superlattices

Observation of Direct Band Gap in GenSim, Strained-Layer Superlattices

1989 ◽  
Author(s):  
H. Okumura ◽  
K. Miki ◽  
S. Misawa ◽  
K. Sakamoto ◽  
T. Sakamoto ◽  
...  
Keyword(s):  
Band Gap ◽  
Strained Layer ◽  
Direct Band Gap ◽  
Direct Band ◽  
Strained Layer Superlattices

Magneto‐optic determinations of the pressure dependence of band‐gap energies and effective masses in strained‐layer superlattices

1985 ◽  
Vol 47 (5) ◽  
pp. 492-494 ◽  
Author(s):  
E. D. Jones ◽  
H. Ackermann ◽  
J. E. Schirber ◽  
T. J. Drummond ◽  
L. R. Dawson ◽  
...  
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Strained Layer ◽  
Effective Masses ◽  
Strained Layer Superlattices ◽  
Magneto Optic

Defects in MBE-grown In AsXSb1-X strained layer superlattices

1991 ◽  
Vol 49 ◽  
pp. 852-853
Author(s):  
S. Chadda ◽  
A. K. Datye ◽  
L. R. Dawson
Keyword(s):  
Band Gap ◽  
Cross Section ◽  
Infrared Detectors ◽  
Molecular Beam ◽  
Research Groups ◽  
Active Device ◽  
Strained Layer ◽  
Transmission Electron ◽  
Strained Layer Superlattices ◽  
P Type

III-V alloy devices are being considered for applications as infrared detectors, by several research groups due to processing advantages over II-VI alloy devices. InAs0.4Sb0.6 has the lowest band gap at 77 K among all III-V compounds, which corresponds to a cut off wavelength of 9 μm. The use of strained layer superlattices (SLS) was first proposed by Osbourn for lowering the band gap and achieving absorption at wavelengths greater than 12 μm at 77 K. A schematic diagram of the device is shown in figure 1. It was grown by Molecular Beam Epitaxy (MBE) at 425 °C and it consists of a p-n junction embedded in a InAs0.15Sb0.85/InSb SLS with layers of equal (110 Å) thickness. The n and p type dopants were S (PbS) and Be respectively. The active device SLS was grown on a composition graded strain relief buffer on the (100) face of an InSb substrate. The samples were sliced, thinned, polished, dimpled and ion milled for making cross-section Transmission Electron Microscope (TEM) samples.

Si-Ge STRAINED LAYER SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-321-C5-327 ◽  
Author(s):  
H. BRUGGER ◽  
G. ABSTREITER
Keyword(s):  
Strained Layer ◽  
Strained Layer Superlattices

nBn structure based on InAs∕GaSb type-II strained layer superlattices

2007 ◽  
Vol 91 (4) ◽  
pp. 043514 ◽  
Author(s):  
J. B. Rodriguez ◽  
E. Plis ◽  
G. Bishop ◽  
Y. D. Sharma ◽  
H. Kim ◽  
...  
Keyword(s):  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattices

Space-charge effects in type-II strained layer superlattices

1998 ◽  
Vol 184-185 ◽  
pp. 728-731 ◽  
Author(s):  
I.V. Bradley ◽  
J.P. Creasey ◽  
K.P. O'Donnell
Keyword(s):  
Space Charge ◽  
Type Ii ◽  
Space Charge Effects ◽  
Charge Effects ◽  
Strained Layer ◽  
Strained Layer Superlattices

On the Existence of Multiple Equilibrium States in Strained-Layer Superlattices

1987 ◽  
Vol 103 ◽  
Author(s):  
William C. Johnson
Keyword(s):  
Free Energy ◽  
Equilibrium State ◽  
Stable Equilibrium ◽  
Multiple Equilibrium ◽  
Equilibrium Thermodynamic ◽  
Relative Thickness ◽  
Two Phase ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTUsing recent results from the thermodynamics of stressed solids, two-phase coexistence in a simple binary strained-layer superlattice is examined. We show that for a given temperature and overall composition of the superlattice, there can exist more than one linearly stable, equilibrium thermodynamic state. That is, there may exist several combinations of relative thickness of the phases and corresponding phase compositions that minimize the free energy of the system. The equilibrium state observed experimentally can, therefore, be influenced by the processing path.

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