Magneto‐optic determinations of the pressure dependence of band‐gap energies and effective masses in strained‐layer superlattices

1985 ◽  
Vol 47 (5) ◽  
pp. 492-494 ◽  
Author(s):  
E. D. Jones ◽  
H. Ackermann ◽  
J. E. Schirber ◽  
T. J. Drummond ◽  
L. R. Dawson ◽  
...  
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Strained Layer ◽  
Effective Masses ◽  
Strained Layer Superlattices ◽  
Magneto Optic

PRESSURE—DEPENDENT MAGNETO—OPTIC MEASUREMENTS IN STRAINED—LAYER SUPERLATTICES AT LOW TEMPERATURES

1985 ◽  
Vol 56 ◽  
Author(s):  
E. D. JONES ◽  
J. E. SCHIRBER ◽  
I. J. FRITZ ◽  
P. L. GOURLEY ◽  
R. M. BIEFELD ◽  
...  
Keyword(s):  
Band Gap Energy ◽  
Light Hole ◽  
Strained Layer ◽  
Pressure Coefficients ◽  
Gap Energy ◽  
Effective Masses ◽  
Strained Layer Superlattices ◽  
Experimental Pressure ◽  
Plane Light ◽  
Magneto Optic

AbstractMagneto—optic studies on InGaAs/GaAs and GaAs/GaPAs strained—layer superlattices are used to determine the in—plane light—hole valence—band effective masses. Also, hydrostatic pressure—dependent magneto—optic studies have been performed on these samples for magnetic fields up to 65 kG andpressures to 4 kbar in the temperature range of 1.6 - 4 K. The experimental pressure coefficients of the band—gap energy and the effective mass in the InGaAs/GaAsSLS structures were determined.

Magneto-optic determination of the light-hole effective masses in InGaAs/GaAs strained-layer superlattices

1985 ◽  
Vol 55 (6) ◽  
pp. 525-527 ◽  
Author(s):  
E.D. Jones ◽  
H. Ackermann ◽  
J.E. Schirber ◽  
T.J. Drummond ◽  
L.R. Dawson ◽  
...  
Keyword(s):  
Light Hole ◽  
Strained Layer ◽  
Effective Masses ◽  
Strained Layer Superlattices ◽  
Magneto Optic

Observation of Direct Band Gap in GenSim, Strained-Layer Superlattices

1989 ◽  
Author(s):  
H. Okumura ◽  
K. Miki ◽  
S. Misawa ◽  
K. Sakamoto ◽  
T. Sakamoto ◽  
...  
Keyword(s):  
Band Gap ◽  
Strained Layer ◽  
Direct Band Gap ◽  
Direct Band ◽  
Strained Layer Superlattices

Defects in MBE-grown In AsXSb1-X strained layer superlattices

1991 ◽  
Vol 49 ◽  
pp. 852-853
Author(s):  
S. Chadda ◽  
A. K. Datye ◽  
L. R. Dawson
Keyword(s):  
Band Gap ◽  
Cross Section ◽  
Infrared Detectors ◽  
Molecular Beam ◽  
Research Groups ◽  
Active Device ◽  
Strained Layer ◽  
Transmission Electron ◽  
Strained Layer Superlattices ◽  
P Type

III-V alloy devices are being considered for applications as infrared detectors, by several research groups due to processing advantages over II-VI alloy devices. InAs0.4Sb0.6 has the lowest band gap at 77 K among all III-V compounds, which corresponds to a cut off wavelength of 9 μm. The use of strained layer superlattices (SLS) was first proposed by Osbourn for lowering the band gap and achieving absorption at wavelengths greater than 12 μm at 77 K. A schematic diagram of the device is shown in figure 1. It was grown by Molecular Beam Epitaxy (MBE) at 425 °C and it consists of a p-n junction embedded in a InAs0.15Sb0.85/InSb SLS with layers of equal (110 Å) thickness. The n and p type dopants were S (PbS) and Be respectively. The active device SLS was grown on a composition graded strain relief buffer on the (100) face of an InSb substrate. The samples were sliced, thinned, polished, dimpled and ion milled for making cross-section Transmission Electron Microscope (TEM) samples.

Si-Ge STRAINED LAYER SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-321-C5-327 ◽  
Author(s):  
H. BRUGGER ◽  
G. ABSTREITER
Keyword(s):  
Strained Layer ◽  
Strained Layer Superlattices
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