Selective area growth of GaN on Si(111) by chemical beam epitaxy

2000 ◽  
Vol 18 (4) ◽  
pp. 1130-1134
Author(s):  
Esther Kim ◽  
A. Tempez ◽  
N. Medelci ◽  
I. Berishev ◽  
A. Bensaoula
1991 ◽  
Vol 30 (Part 2, No. 6B) ◽  
pp. L1089-L1091 ◽  
Author(s):  
Hideo Sugiura ◽  
Ryuzo Iga ◽  
Takeshi Yamada ◽  
Tsuyoshi Toriyama

1994 ◽  
Author(s):  
Graham J. Davies ◽  
P. J. Skevington ◽  
J. S. Foord ◽  
C. L. French ◽  
C. L. Levoguer

1995 ◽  
Vol 148 (3) ◽  
pp. 211-218 ◽  
Author(s):  
P. Legay ◽  
F. Alexandre ◽  
M. Nunez ◽  
J. Sapriel ◽  
D. Zerguine ◽  
...  

1997 ◽  
Vol 170 (1-4) ◽  
pp. 650-654 ◽  
Author(s):  
C.A. Verschuren ◽  
M.R. Leys ◽  
Y.S. Oei ◽  
C.G.M. Vreeburg ◽  
H. Vonk ◽  
...  

1992 ◽  
Vol 120 (1-4) ◽  
pp. 369-375 ◽  
Author(s):  
G.J. Davies ◽  
P.J. Skevington ◽  
C.L. French ◽  
J.S. Foord

1993 ◽  
Vol 127 (1-4) ◽  
pp. 169-174 ◽  
Author(s):  
T.H. Chiu ◽  
Y. Chen ◽  
J. Zucker ◽  
J.L. Marshall ◽  
S. Shunk ◽  
...  

1998 ◽  
Vol 37 (Part 2, No. 8B) ◽  
pp. L966-L969 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Yoshio Honda ◽  
Hidetada Matsushima ◽  
Masahito Yamaguchi ◽  
Kazumasa Hiramatsu ◽  
...  

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