Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature

1985 ◽  
Vol 46 (8) ◽  
pp. 742-744 ◽  
Author(s):  
W. T. Tsang
Keyword(s):  
Selective Area Growth ◽  
Chemical Beam Epitaxy ◽  
Selective Area ◽  
Area Growth

Selective Area Growth of InP and InGaAs Layers on SiO2-Masked Substrate by Chemical Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 6B) ◽  
pp. L1089-L1091 ◽  
Author(s):  
Hideo Sugiura ◽  
Ryuzo Iga ◽  
Takeshi Yamada ◽  
Tsuyoshi Toriyama
Keyword(s):  
Selective Area Growth ◽  
Chemical Beam Epitaxy ◽  
Selective Area ◽  
Area Growth

Selective area growth of III-V semiconductors by chemical beam epitaxy: study of reaction mechanisms

1994 ◽  
Author(s):  
Graham J. Davies ◽  
P. J. Skevington ◽  
J. S. Foord ◽  
C. L. French ◽  
C. L. Levoguer
Keyword(s):  
Reaction Mechanisms ◽  
Selective Area Growth ◽  
Chemical Beam Epitaxy ◽  
Selective Area ◽  
Area Growth

Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy

1995 ◽  
Vol 148 (3) ◽  
pp. 211-218 ◽  
Author(s):  
P. Legay ◽  
F. Alexandre ◽  
M. Nunez ◽  
J. Sapriel ◽  
D. Zerguine ◽  
...  
Keyword(s):  
Low Temperature ◽  
Selective Area Growth ◽  
Chemical Beam Epitaxy ◽  
Selective Area ◽  
Area Growth

Surface morphology of in selective area growth by chemical beam epitaxy

1997 ◽  
Vol 170 (1-4) ◽  
pp. 650-654 ◽  
Author(s):  
C.A. Verschuren ◽  
M.R. Leys ◽  
Y.S. Oei ◽  
C.G.M. Vreeburg ◽  
H. Vonk ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Selective Area Growth ◽  
Chemical Beam Epitaxy ◽  
Selective Area ◽  
Area Growth

Selective area growth of GaN on Si(111) by chemical beam epitaxy

2000 ◽  
Vol 18 (4) ◽  
pp. 1130-1134
Author(s):  
Esther Kim ◽  
A. Tempez ◽  
N. Medelci ◽  
I. Berishev ◽  
A. Bensaoula
Keyword(s):  
Selective Area Growth ◽  
Chemical Beam Epitaxy ◽  
Selective Area ◽  
Area Growth ◽  
Gan On Si

Selective area growth of III–V compound semiconductors by chemical beam epitaxy

1992 ◽  
Vol 120 (1-4) ◽  
pp. 369-375 ◽  
Author(s):  
G.J. Davies ◽  
P.J. Skevington ◽  
C.L. French ◽  
J.S. Foord
Keyword(s):  
Compound Semiconductors ◽  
Selective Area Growth ◽  
Chemical Beam Epitaxy ◽  
Selective Area ◽  
Area Growth

Selective area growth of InGaAsP/InP waveguide modulator structures by chemical beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 169-174 ◽  
Author(s):  
T.H. Chiu ◽  
Y. Chen ◽  
J. Zucker ◽  
J.L. Marshall ◽  
S. Shunk ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
Chemical Beam Epitaxy ◽  
Selective Area ◽  
Area Growth ◽  
Waveguide Modulator

Selective-area growth of III/V semiconductors in chemical beam epitaxy

1993 ◽  
Vol 8 (6) ◽  
pp. 1023-1031 ◽  
Author(s):  
H Heinecke ◽  
A Milde ◽  
B Baur ◽  
R Matz
Keyword(s):  
Selective Area Growth ◽  
Chemical Beam Epitaxy ◽  
Selective Area ◽  
Area Growth
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