Monte Carlo simulation of vapor transport in physical vapor deposition of titanium

2000 ◽  
Vol 18 (3) ◽  
pp. 907-916 ◽  
Author(s):  
Jitendra Balakrishnan ◽  
Iain D. Boyd ◽  
David G. Braun
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Vapor Transport

Monte Carlo simulation of hyperthermal physical vapor deposition

2001 ◽  
Vol 49 (16) ◽  
pp. 3321-3332 ◽  
Author(s):  
Y.G Yang ◽  
X.W Zhou ◽  
R.A Johnson ◽  
H.N.G Wadley
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Vapor Deposition ◽  
Physical Vapor Deposition

Monte Carlo simulation of the influence of pressure and target–substrate distance on the sputtering process for metal and semiconductor layers

2016 ◽  
Vol 30 (20) ◽  
pp. 1650253 ◽  
Author(s):  
Abdelkader Bouazza ◽  
Abderrahmane Settaouti
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Close Relation ◽  
Gas Pressure ◽  
Substrate Distance ◽  
Good Agreement ◽  
Number Of Particles

The energy and the number of particles arriving at the substrate during physical vapor deposition (PVD) are in close relation with divers parameters. In this work, we present the influence of the distance between the target and substrate and the gas pressure in the sputtering process of deposited layers of metals (Cu, Al and Ag) and semiconductors (Ge, Te and Si) for substrate diameter of 40 cm and target diameter of 5 cm. The nascent sputter flux, the flux of the atoms and their energy arriving at the substrate have been simulated by Monte Carlo codes. A good agreement between previous works of other groups and our simulations for sputter pressures (0.3–1 Pa) and target–substrate distances (8–20 cm) is obtained.

A Monte Carlo simulation of the physical vapor deposition of nickel

1997 ◽  
Vol 45 (4) ◽  
pp. 1455-1468 ◽  
Author(s):  
Y.G. Yang ◽  
R.A. Johnson ◽  
H.N.G. Wadley
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Vapor Deposition ◽  
Physical Vapor Deposition

Monte Carlo Modeling of Atom Transport During Directed Vapor Deposition

1996 ◽  
Vol 441 ◽  
Author(s):  
J. F. Groves ◽  
H. N. G. Wadley
Keyword(s):  
Monte Carlo ◽  
Vapor Deposition ◽  
Velocity Vector ◽  
Vapor Transport ◽  
Atomic Vapor ◽  
Collision Model ◽  
Carrier Gas ◽  
Vapor Atom ◽  
The Impact ◽  
Directed Vapor Deposition

AbstractAtomic vapor transport has been investigated in the low vacuum (5 – 100 Pa) supersonic gas jets encountered in directed vapor deposition processes using a combination of Direct Simulation Monte Carlo (DSMC) techniques and a bimolecular collision model. The DSMC code generates the velocity vector, pressure, and temperature field for the carrier gas flow. This data is used as an input to a bimolecular collision model of atomic vapor transport in the flow. In the collision model, calculation of directed momentum loss cross-sections allows the location of carrier gas/vapor atom collisions to be deduced, and the vapor atom velocity vectors for individual vapor atoms to be tracked from source to substrate. For atoms arriving at the substrate, the impact location and velocity vector are obtained, making possible calculation of deposition efficiency, film thickness, adatom energy, and impact angle. These are the key inputs for simulations of resulting film microstructure/morphology evolution. Preliminary results for atomic transport of Cu vapor in supersonic He flows compare favorably with previously reported experimental observations.

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