Monte–Carlo simulation of the particle transport during physical vapor deposition of ceramic superconductors

2005 ◽  
Vol 425 (3-4) ◽  
pp. 101-110 ◽  
Author(s):  
E.K. Hollmann ◽  
V.A. Vol‘pyas ◽  
R. Wördenweber
2001 ◽  
Vol 49 (16) ◽  
pp. 3321-3332 ◽  
Author(s):  
Y.G Yang ◽  
X.W Zhou ◽  
R.A Johnson ◽  
H.N.G Wadley

2016 ◽  
Vol 30 (20) ◽  
pp. 1650253 ◽  
Author(s):  
Abdelkader Bouazza ◽  
Abderrahmane Settaouti

The energy and the number of particles arriving at the substrate during physical vapor deposition (PVD) are in close relation with divers parameters. In this work, we present the influence of the distance between the target and substrate and the gas pressure in the sputtering process of deposited layers of metals (Cu, Al and Ag) and semiconductors (Ge, Te and Si) for substrate diameter of 40 cm and target diameter of 5 cm. The nascent sputter flux, the flux of the atoms and their energy arriving at the substrate have been simulated by Monte Carlo codes. A good agreement between previous works of other groups and our simulations for sputter pressures (0.3–1 Pa) and target–substrate distances (8–20 cm) is obtained.


1997 ◽  
Vol 45 (4) ◽  
pp. 1455-1468 ◽  
Author(s):  
Y.G. Yang ◽  
R.A. Johnson ◽  
H.N.G. Wadley

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