X-ray phosphor deposition technology for co-integration with amorphous silicon imaging arrays

2000 ◽  
Vol 18 (2) ◽  
pp. 639-642 ◽  
Author(s):  
Z. H. Gu ◽  
S. Tao ◽  
I. Chan ◽  
A. Nathan
Keyword(s):  
Amorphous Silicon ◽  
Imaging Arrays ◽  
X Ray ◽  
Deposition Technology

Photoresponse Linearity of a-Si:H Imaging Pixels

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Yorkston ◽  
L.E. Antonuk ◽  
W. Huang ◽  
R.A. Street
Keyword(s):  
Amorphous Silicon ◽  
Bias Voltage ◽  
Linear Response ◽  
Reverse Bias ◽  
Reverse Bias Voltage ◽  
Imaging Arrays ◽  
Low Contrast ◽  
X Ray

Amorphous silicon imaging arrays with ∼3×105 pixels have recently been developed and x-ray images of low contrast anatomical phantoms have been demonstrated. This paper reports on the linearity of response of these a-Si:H imaging pixels as a function of reverse bias voltage. The fraction of the imaging pixel's full signal range that maintains a linear response has been found to increase with increasing voltage.

Considerations for High Frame Rate Operation of Two-Dimensional a-Si:H Imaging Arrays

1993 ◽  
Vol 297 ◽  
Author(s):  
L.E. Antonuk ◽  
J. Yorkston ◽  
W. Huang ◽  
J. Siewerdsen ◽  
R.A. Street
Keyword(s):  
Amorphous Silicon ◽  
Frame Rate ◽  
Two Dimensional ◽  
Large Area ◽  
Array Design ◽  
Imaging Arrays ◽  
X Ray ◽  
High Frame Rate ◽  
X Ray Imaging ◽  
Silicon Arrays

Large area, two-dimensional, amorphous silicon arrays are under development for x-ray imaging applications. Theoretical limits on frame rates imposed by array design and operational requirements are examined. Measurements of image lag as a function of frame rate are reported.

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

Radiation response of amorphous silicon imaging arrays at diagnostic energies

1994 ◽  
Vol 41 (4) ◽  
pp. 1500-1505 ◽  
Author(s):  
L.E. Antonuk ◽  
J.H. Siewerdsen ◽  
J. Yorkston ◽  
W. Huang
Keyword(s):  
Amorphous Silicon ◽  
Radiation Response ◽  
Imaging Arrays

Medium-Range Order of Amorphous Silicon Germanium Alloys: Small-Angle X-Ray Scattering Study

1989 ◽  
Vol 28 (Part 2, No. 7) ◽  
pp. L1092-L1095 ◽  
Author(s):  
Shin-ichi Muramatsu ◽  
Toshikazu Shimada ◽  
Hiroshi Kajiyama ◽  
Kazufumi Azuma ◽  
Takeshi Watanabe ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Small Angle ◽  
Silicon Germanium ◽  
Range Order ◽  
Medium Range Order ◽  
X Ray ◽  
X Ray Scattering ◽  
Medium Range ◽  
Scattering Study ◽  
Amorphous Silicon Germanium

Investigation on the Preparation of High Precision Multilayer X-ray Fresnel Zone Plates Based on Atomic Layer Deposition Technology

2021 ◽  
Vol 50 (1) ◽  
pp. 156-164
Author(s):  
吴鹿杰 Lujie WU ◽  
文庆涛 Qingtao WEN ◽  
高雅增 Yazeng GAO ◽  
卢维尔 Weier LU ◽  
夏洋 Yang XIA ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Precision ◽  
Fresnel Zone ◽  
Atomic Layer ◽  
Fresnel Zone Plates ◽  
X Ray ◽  
Zone Plates ◽  
Layer Deposition ◽  
Deposition Technology

scholarly journals Neutron and x-ray Reflectometry Investigations of Amorphous Silicon-based Surface Passivation Layers

2014 ◽  
Vol 55 ◽  
pp. 813-817 ◽  
Author(s):  
Erik S. Marstein ◽  
Ida M. Hasle ◽  
Atle J. Qviller ◽  
Halvard Haug
Keyword(s):  
Amorphous Silicon ◽  
Surface Passivation ◽  
X Ray ◽  
Passivation Layers ◽  
Silicon Based
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