In situ study of interface reactions of ion beam sputter deposited (Ba0.5Sr0.5)TiO3 films on Si, SiO2, and Ir

1999 ◽  
Vol 17 (4) ◽  
pp. 1880-1886 ◽  
Author(s):  
Y. Gao ◽  
A. H. Mueller ◽  
E. A. Irene ◽  
O. Auciello ◽  
A. Krauss ◽  
...  
Keyword(s):  
Ion Beam ◽  
Interface Reactions ◽  
In Situ Study ◽  
Sputter Deposited

In-Situ, Time Resolved, Kinetics of Reactions in Co-Ge thin Films

1991 ◽  
Vol 237 ◽  
Author(s):  
R. M. Walser ◽  
Byung-Hak Lee ◽  
Alaka Valanju ◽  
Winston Win ◽  
M. F. Becker
Keyword(s):  
Depth Profiling ◽  
Laser Interferometry ◽  
Semiconductor Interface ◽  
Time Resolved ◽  
Interface Reactions ◽  
Valuable Adjunct ◽  
Diffusion Controlled ◽  
Sputter Deposited ◽  
Time Required

ABSTRACTWe report the first kinetic study of metal-semiconductor interface reactions using in-situ, time resolved, laser interferometry. Diffusion couples with Co/Ge thicknesses of 1500 Å/1500 Å were sputter deposited on silicon wafers, and vacuum-annealed at temperatures between 300°C-400°C. Under these conditions polycrystalline CoGe was expected to form [1]. Real time laser (HeNe 6328 Å) interferograms for each anneal were recorded in-situ. These data were supplemented by information from AES and X-ray.For temperatures below 400°C the diffusion controlled formation of CoGe was observed. The composition was confirmed by Auger depth profiling that showed uniform Co and Ge concentrations when the reaction went to completion. The well defined interferences fringes were formed by the dissolution of amorphous Ge. The activation energy = 1.6 eV for the formation of CoGe were determined with precision from the temperature dependence of the time required to anneal the fixed λ/4 distance between adjacent minima and maxima of the interferogram. We discuss the evidence for formation of an intermediate Co-rich compound following the initial diffusion of Co into Ge. The results of these experiments indicate that optical interferometry will be a valuable adjunct to other techniques used to study metal-semiconductor interface reactions.

In situ study of ion beam induced Si crystallization from a silicide interface

1993 ◽  
Vol 73 ◽  
pp. 264-267 ◽  
Author(s):  
F. Fortuna ◽  
M.-O. Ruault ◽  
H. Bernas ◽  
H. Gu ◽  
C. Colliex
Keyword(s):  
Ion Beam ◽  
In Situ Study

A RMEED and SEM investigation of metal oxidation phenomena

1978 ◽  
Vol 36 (1) ◽  
pp. 444-445
Author(s):  
G.G. Hembree ◽  
J.M. Cowley ◽  
M.A. Otooni
Keyword(s):  
Ion Beam ◽  
Pure Copper ◽  
Reaction Times ◽  
Copper Films ◽  
Metal Oxidation ◽  
Low Oxygen ◽  
In Situ Study ◽  
Diffraction Patterns ◽  
Argon Ion

We have recently completed an in-situ study of the reaction of copper thin films at low oxygen pressures (10-5 torr) and relatively high temperatures (500-700°C).These conditions allow convenient observation over reasonably short reaction times in our UHV RMEED/SEM instrument(1).Epitaxially grown (111) copper films of approximately 100nm thickness were prepared in a conventional HV system and placed in the UHV system as produced on their mica substrates. Epitaxy was confirmed by TED/TEM on pieces of the film which were stripped off the substrate and by the electron channeling patterns observed in the SEM. Initial treatment in the UHV system included annealing at 300°C for several hours and a final anneal at 500°C for one hour. In one case the film was sputter cleaned with a 700eV argon ion beam between the two annealing processes. Some oxide nuclei of various sizes were observed after this treatment.After the initial cleaning pure copper reflection diffraction patterns as in Fig.1 were recorded up to the sixth order.

In situ study of ion-beam induced lattice damage in calcium fluoride crystals

1997 ◽  
Vol 127-128 ◽  
pp. 591-595 ◽  
Author(s):  
Ning Yu ◽  
Michael Nastasi ◽  
Kurt E. Sickafus ◽  
Kazuhiro Yasuda ◽  
Joseph R. Tesmer
Keyword(s):  
Calcium Fluoride ◽  
Ion Beam ◽  
In Situ Study ◽  
Lattice Damage ◽  
Fluoride Crystals

How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study

2002 ◽  
Vol 81 (14) ◽  
pp. 2617-2619 ◽  
Author(s):  
M.-O. Ruault ◽  
F. Fortuna ◽  
H. Bernas ◽  
M. C. Ridgway ◽  
J. S. Williams
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
In Situ Study ◽  
Amorphous Si

In Situ Study of the Temperature Dependence of Irradiation-Induced Amorphization in A-Sic

1995 ◽  
Vol 398 ◽  
Author(s):  
W. J. Weber ◽  
L. M. Wang ◽  
N. Yu ◽  
N. J. Hess
Keyword(s):  
Damage Accumulation ◽  
Ion Beam ◽  
Amorphous State ◽  
Damage Level ◽  
Ion Channeling ◽  
In Situ Study ◽  
Recovery Processes ◽  
Dual Beam ◽  
Two Stages

ABSTRACTIon-beam-induced amorphization in single crystal α-SiC has been studied as a function of temperature. Specimens have been irradiated with 1.5 MeV Xe+ ions over the temperature range from 20 to 475 K using the HVEM-Tandem Facility (ANL), and the evolution of the amorphous state has been followed in situ in the HVEM. Specimens also have been irradiated at 170, 300, and 370 K with 360 keV Ar+ ions, and the damage accumulation process followed in situ by Rutherford backscattering spectroscopy/channeling using the dual beam facilities at the Ion Beam Materials Laboratory (LANL). At 20 K, the displacement dose for complete amorphization is 0.25 dpa and increases with temperature in two stages. The activation energy associated with the simultaneous recovery processes above 100 K is 0.12 ± 0.02 eV. The critical temperature above which amorphization does not occur is 485 K under the 1.5 MeV Xe+ irradiation conditions. Ion channeling results suggest that the rate of simultaneous recovery increases with temperature only above a critical damage level. Raman spectroscopy indicates that rapid chemical disordering occurs during irradiation.

Ion Beam Induced Crystallization of Amorphous Si from NiSi2 Precipitates: An In Situ Study

1992 ◽  
Vol 279 ◽  
Author(s):  
F. Fortuna ◽  
M. -O. Ruault ◽  
H. Bernas ◽  
H. Gu ◽  
C. Colliex
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
In Situ Study ◽  
Transmission Electron ◽  
Interface Roughening ◽  
Amorphous Si ◽  
Induced Crystallization ◽  
Growth Shape

ABSTRACTBy first growing NiSi2 precipitates in a-Si and then irradiating with a 150 keV Si beam, we have studied ion beam induced epitaxial crystallization (IBIEC) of Si initiated at a-Si/NiSi2 precipitate interfaces. The growth shape and its temperature dependence are studied in-beam via in situ transmission electron microscopy. Interface roughening is evidenced. Preliminary results for the Co-Si system are also reported.

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