Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment

1999 ◽  
Vol 17 (5) ◽  
pp. 3129-3133 ◽  
Author(s):  
Katsuyuki Sekine ◽  
Yuji Saito ◽  
Masaki Hirayama ◽  
Tadahiro Ohmi
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Gate Dielectric ◽  
Film Growth ◽  
Ion Bombardment ◽  
High Density ◽  
Low Energy ◽  
Nitride Film ◽  
Silicon Nitride Film

Silicon nitride film growth by remote plasma CVD using Tris(dimethylamino)silane

Vacuum ◽  
1998 ◽  
Vol 51 (4) ◽  
pp. 747-750 ◽  
Author(s):  
Toru Aoki ◽  
Takuya Ogishima ◽  
Aleksander M Wróbel ◽  
Yoichiro Nakanishi ◽  
Yoshinori Hatanaka
Keyword(s):  
Silicon Nitride ◽  
Film Growth ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Cvd ◽  
Remote Plasma

Theoretical Investigation on Silicon-Nitride Film Growth: Statistical Approach

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6518-6522 ◽  
Author(s):  
Shiro Koseki ◽  
Akihiko Ishitani ◽  
Yuichi Fujimura
Keyword(s):  
Silicon Nitride ◽  
Theoretical Investigation ◽  
Statistical Approach ◽  
Film Growth ◽  
Nitride Film ◽  
Silicon Nitride Film

The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD

2016 ◽  
Vol 18 (18) ◽  
pp. 13033-13044 ◽  
Author(s):  
B. B. Sahu ◽  
Y. Y. Yin ◽  
T. Tsutsumi ◽  
M. Hori ◽  
Jeon G. Han
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Plasma Chemistry ◽  
Correlation Study ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Dual Frequency ◽  
Plasma Parameters ◽  
Film Properties

A correlation study of plasma parameters and film properties and the implication of dual frequency PECVD for industry are proposed.

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