Fourier-transform infrared measurements of CHF3/O2 discharges in an electron cyclotron resonance reactor

1999 ◽  
Vol 17 (5) ◽  
pp. 2586-2592 ◽  
Author(s):  
M. J. Goeckner ◽  
N. A. Goeckner
Keyword(s):  
Fourier Transform ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Fourier Transform Infrared ◽  
Electron Cyclotron ◽  
Infrared Measurements

Electron Cyclotron Resonance in Strained Si and Si0.94Ge0.06 Channels on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition

1996 ◽  
Vol 429 ◽  
Author(s):  
C. W. Liu ◽  
V. Venkataramana
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Far Infrared ◽  
Electron Cyclotron ◽  
Buffer Layers ◽  
Dimensional Electron ◽  
Strained Si ◽  
Thermal Chemical Vapor Deposition ◽  
Infrared Measurements

AbstractWe report the far-infrared measurements of the electron cyclotron resonance absorption in n-type Si/Si0. 62Ge0.38 and Si0.94Ge0.06 /Si0. 62Ge0.38 modulation- doped heterostructures grown by rapid thermal chemical vapor deposition. The strained Si and Si0.94Ge0.06 channels were grown on relaxed Si0.62Ge0.38 buffer layers, which consist of 0.6 μm uniform Si0.62Ge0.38 layers and 0.5 μm compositionally graded relaxed SiGe layers from 0% Ge to 38 % Ge. The buffer layers were annealed at 800 °C for 1 hr to obtain complete relaxation. The samples had 100 Å spacers and 300 Å 2×1019 cm-3 n-type supply layers on the tops of the 75 Å channels. The far-infrared measurements of electron cyclotron resonance were performed at 4K with the magnetic field of 4 – 8 Tesla. The effective masses determined from the slope of center frequency of absorption peak vs applied magnetic field plot are 0.20 mo and 0.19 mo for the two dimensional electron gases in the Si and Si0.94Ge0.06 channels, respectively. The Si effective mass is very close to that of two dimensional electron gas in Si MOSFET (0.198mo). The electron effective mass of Si0.94Ge0.06 is reported for the first time and about 5 % lower than that of pure Si.

Anisotropic electron cyclotron resonance etching of tungsten films on GaAs

1994 ◽  
Vol 30 (1) ◽  
pp. 84-85 ◽  
Author(s):  
R.J. Shul ◽  
D.J. Rieger ◽  
C. Constantine ◽  
A.G. Baca ◽  
C. Barratt
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron

Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

1990 ◽  
Vol 56 (15) ◽  
pp. 1424-1426 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. P. Kinsella ◽  
D. Johnson ◽  
C. Constantine
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma
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