Very uniform and high aspect ratio anisotropy SiO2 etching process in magnetic neutral loop discharge plasma

1999 ◽  
Vol 17 (5) ◽  
pp. 2546-2550 ◽  
Author(s):  
W. Chen ◽  
Y. Morikawa ◽  
M. Itoh ◽  
T. Hayashi ◽  
K. Sugita ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Discharge Plasma ◽  
Etching Process ◽  
Sio2 Etching

Sharp Needles: Fabrication of Tungsten Nanotips by AC Electrochemical Etching and Laser Enhanced Etching for Nanoprobing on Interconnects of Advanced Technology Nodes.

2013 ◽  
Vol 1553 ◽  
Author(s):  
M. K. Dawood ◽  
Z.H. Mai ◽  
T. H. Ng ◽  
H. Tan ◽  
P.K. Tan ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Laser Irradiation ◽  
High Aspect Ratio ◽  
Electrochemical Etching ◽  
Etching Process ◽  
Advanced Technology ◽  
Radius Of Curvature ◽  
20 Nm ◽  
Technology Nodes ◽  
Contact Size

ABSTRACTSharper nanotips are required for application in nanoprobing systems due to a shrinking contact size with each new transistor technology node. We describe a two-step etching process to fabricate W nanotips with controllable tip dimensions. The first process is an optimized AC electrochemical etching in KOH to fabricate nanotips with a radius of curvature (ROC) down to 90 nm. This was followed by a secondary nanotip sharpening process by laser irradiation in KOH. High aspect ratio nanotips with ROC close to 20 nm were obtained. Finally we demonstrate the application of the fabricated nanotips for nanoprobing on advanced technology SRAM devices.

Application of magnetic neutral loop discharge plasma to SiO2 etching process

Vacuum ◽  
1999 ◽  
Vol 53 (1-2) ◽  
pp. 29-32 ◽  
Author(s):  
W. Chen ◽  
T. Hayashi ◽  
M. Itoh ◽  
Y. Morikawa ◽  
K. Sugita ◽  
...  
Keyword(s):  
Discharge Plasma ◽  
Etching Process ◽  
Sio2 Etching

Investigations of Surface Reactions in Neutral Loop Discharge Plasma for High-Aspect-Ratio SiO2Etching

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1429-1434 ◽  
Author(s):  
Yasuhiro Morikawa ◽  
Wei Chen ◽  
Toshio Hayashi ◽  
Taijiro Uchida
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Discharge Plasma ◽  
Surface Reactions

Direct-Writing of High-Aspect-Ratio Trenches in Silicon

1986 ◽  
Vol 75 ◽  
Author(s):  
G. V. Treyz ◽  
R. Beach ◽  
R. M. Osgood
Keyword(s):  
Experimental Data ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Etch Rate ◽  
Crystalline Silicon ◽  
Etching Process ◽  
Direct Writing ◽  
Variable Curvature ◽  
Model Predictions

AbstractDeep trenches have been etched in crystalline silicon with polarization-controlled, variable-curvature walls. Scan speeds of up to 10mm/s have been demonstrated. A model of the etching process has been developed which is based on a local, melt-enhanced etch rate. Comparisons of model predictions and experimental data are presented.

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