Thickness determination of metal thin films with spectroscopic ellipsometry for x-ray mirror and multilayer applications

1999 ◽  
Vol 17 (5) ◽  
pp. 2741-2748 ◽  
Author(s):  
Chian Liu ◽  
J. Erdmann ◽  
J. Maj ◽  
A. Macrander
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Metal Thin Films ◽  
X Ray ◽  
Thickness Determination

Thickness determination of SrZrO3 thin films using both X-ray reflectometry and SIMS techniques

2008 ◽  
Vol 516 (22) ◽  
pp. 7967-7973 ◽  
Author(s):  
K. Galicka-Fau ◽  
C. Legros ◽  
M. Andrieux ◽  
M. Herbst-Ghysel ◽  
I. Gallet ◽  
...  
Keyword(s):  
Thin Films ◽  
X Ray ◽  
Thickness Determination

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Crystal structure determination of solar cell materials: Cu2ZnSnS4 thin films using X-ray anomalous dispersion

2012 ◽  
Vol 524 ◽  
pp. 22-25 ◽  
Author(s):  
Hiroshi Nozaki ◽  
Tatsuo Fukano ◽  
Shingo Ohta ◽  
Yoshiki Seno ◽  
Hironori Katagiri ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Solar Cell ◽  
Structure Determination ◽  
Anomalous Dispersion ◽  
Crystal Structure Determination ◽  
X Ray

scholarly journals Oxidation of aluminum thin films protected by ultrathin MgF2 layers measured using spectroscopic ellipsometry and X-ray photoelectron spectroscopy

OSA Continuum ◽  
2021 ◽  
Vol 4 (3) ◽  
pp. 879
Author(s):  
Brian I. Johnson ◽  
Tahereh G. Avval ◽  
R. Steven Turley ◽  
Matthew R. Linford ◽  
David D. Allred
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Photoelectron Spectroscopy ◽  
X Ray

Determination of dopant concentration in co-deposited organic thin films by using RBS and X-ray fluorescence combined techniques

2013 ◽  
Vol 35 (12) ◽  
pp. 2440-2443 ◽  
Author(s):  
Y.A. Paredes ◽  
E.G. Gravina ◽  
M.D. Barbosa ◽  
R. Machado ◽  
W.G. Quirino ◽  
...  
Keyword(s):  
Thin Films ◽  
Dopant Concentration ◽  
Organic Thin Films ◽  
X Ray
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