Characterization of sol-gel prepared WO3 thin films as a gas sensor

1999 ◽  
Vol 17 (4) ◽  
pp. 1873-1879 ◽  
Author(s):  
C. Cantalini ◽  
M. Z. Atashbar ◽  
Y. Li ◽  
M. K. Ghantasala ◽  
S. Santucci ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Sol Gel ◽  
Wo3 Thin Films

Characterization of photochemically grown Pd loaded WO3 thin films and its evaluation as ammonia gas sensor

2020 ◽  
Vol 825 ◽  
pp. 154166 ◽  
Author(s):  
C. Castillo ◽  
G. Cabello ◽  
B. Chornik ◽  
Y. Huentupil ◽  
G.E. Buono-Core
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Ammonia Gas ◽  
Wo3 Thin Films

Structural and optical characterization of WO3 thin films for gas sensor applications

2005 ◽  
Vol 97 (9) ◽  
pp. 093527 ◽  
Author(s):  
E. György ◽  
G. Socol ◽  
I. N. Mihailescu ◽  
C. Ducu ◽  
S. Ciuca
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Optical Characterization ◽  
Sensor Applications ◽  
Wo3 Thin Films

Preparation and characterization of an optically-detectable hydrogen gas sensor consisting of Pd/WO3 thin films

1993 ◽  
Vol 14 (1-3) ◽  
pp. 547-548 ◽  
Author(s):  
Yong-su Oh ◽  
Junichi Hamagami ◽  
Yuichi Watanabe ◽  
Masasuke Takata
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Hydrogen Gas ◽  
Wo3 Thin Films

Morphological and structural characterization of WO3 and Cr–WO3 thin films synthesized by sol–gel process

2010 ◽  
Vol 518 (16) ◽  
pp. 4512-4514 ◽  
Author(s):  
Mauro Epifani ◽  
Jordi Arbiol ◽  
Raül Díaz ◽  
Teresa Andreu ◽  
Pietro Siciliano ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Sol Gel ◽  
Sol Gel Process ◽  
Wo3 Thin Films

ELECTROCHROMIC CHARACTERIZATION OF ELECTRODEPOSITED WO3 THIN FILMS

2002 ◽  
Author(s):  
R. VIJAYALAKSHMI ◽  
M. JAYACHANDRAN ◽  
C. SANJEEVIRAJA
Keyword(s):  
Thin Films ◽  
Wo3 Thin Films

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

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