Structural and optical characterization of WO3 thin films for gas sensor applications

2005 ◽  
Vol 97 (9) ◽  
pp. 093527 ◽  
Author(s):  
E. György ◽  
G. Socol ◽  
I. N. Mihailescu ◽  
C. Ducu ◽  
S. Ciuca
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Optical Characterization ◽  
Sensor Applications ◽  
Wo3 Thin Films

Characterization of photochemically grown Pd loaded WO3 thin films and its evaluation as ammonia gas sensor

2020 ◽  
Vol 825 ◽  
pp. 154166 ◽  
Author(s):  
C. Castillo ◽  
G. Cabello ◽  
B. Chornik ◽  
Y. Huentupil ◽  
G.E. Buono-Core
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Ammonia Gas ◽  
Wo3 Thin Films

Preparation and characterization of NiO thin films for gas sensor applications

Vacuum ◽  
2000 ◽  
Vol 58 (2-3) ◽  
pp. 300-307 ◽  
Author(s):  
I Hotový ◽  
J Huran ◽  
L Spiess ◽  
R Čapkovic ◽  
Š Haščı́k
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Sensor Applications

Preparation and characterization of an optically-detectable hydrogen gas sensor consisting of Pd/WO3 thin films

1993 ◽  
Vol 14 (1-3) ◽  
pp. 547-548 ◽  
Author(s):  
Yong-su Oh ◽  
Junichi Hamagami ◽  
Yuichi Watanabe ◽  
Masasuke Takata
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Hydrogen Gas ◽  
Wo3 Thin Films

Characterization of sol-gel prepared WO3 thin films as a gas sensor

1999 ◽  
Vol 17 (4) ◽  
pp. 1873-1879 ◽  
Author(s):  
C. Cantalini ◽  
M. Z. Atashbar ◽  
Y. Li ◽  
M. K. Ghantasala ◽  
S. Santucci ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Sol Gel ◽  
Wo3 Thin Films

ELECTROCHROMIC CHARACTERIZATION OF ELECTRODEPOSITED WO3 THIN FILMS

2002 ◽  
Author(s):  
R. VIJAYALAKSHMI ◽  
M. JAYACHANDRAN ◽  
C. SANJEEVIRAJA
Keyword(s):  
Thin Films ◽  
Wo3 Thin Films

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

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