Erratum: “Determination of metal vapor ion concentration in an argon/copper plasma for ionized physical vapor deposition” [J. Vac. Sci. Technol. A 16, 2198 (1998)]

1999 ◽  
Vol 17 (1) ◽  
pp. 322-322
Author(s):  
J. E. Foster ◽  
A. E. Wendt ◽  
W. W. Wang ◽  
J. H. Booske
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Metal Vapor ◽  
Ion Concentration ◽  
Ionized Physical Vapor Deposition ◽  
Copper Plasma

scholarly journals An rf sustained argon and copper plasma for ionized physical vapor deposition of copper

1999 ◽  
Vol 85 (11) ◽  
pp. 7556-7561 ◽  
Author(s):  
W. Wang ◽  
J. Foster ◽  
T. Snodgrass ◽  
A. E. Wendt ◽  
J. H. Booske
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ionized Physical Vapor Deposition ◽  
Copper Plasma

Cu seed step coverage evolution with target lifetime for long-throw self ionized physical vapor deposition chambers

2022 ◽  
pp. 111717
Author(s):  
Elisa Pegoraro ◽  
Alberto Perrotta ◽  
Gianpaolo Lorito ◽  
Laura Bertarelli ◽  
Benoit-Noel Bozon ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Step Coverage ◽  
Ionized Physical Vapor Deposition

Extendibility of Cu Damascene to 0.1 μm Wide Interconnections

1998 ◽  
Vol 514 ◽  
Author(s):  
C-K. Hu ◽  
K. Y. Lee ◽  
L. Gignac ◽  
S. M. Rossnagel ◽  
C. Uzoh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Chemical Mechanical Polishing ◽  
Seed Layer ◽  
Physical Vapor Deposition ◽  
Ion Etching ◽  
Damascene Process ◽  
Effective Resistivity ◽  
Ionized Physical Vapor Deposition ◽  
Deposition Techniques

ABSTRACTWe demonstrate the extendibility of the Cu damascene process to 0.1 μm wide lines. Cu interconnects, 0.1 - 1 μm wide, were fabricated by a damascene process that produced planarized lines and vias, imbedded in insulators. This process was defined by 1) trench and via formation in blanket dielectrics using e-beam lithography and reactive ion etching, 2) trench fill using a series of metal depositions, and 3) chemical mechanical polishing to remove the field metals. Physical vapor and ionized physical vapor deposition techniques were used to deposit the adhesion/diffusion barrier liner and the Cu seed layer, respectively. The main Cu conductor was deposited by an electroplating method. The width of lines and vias were varied from 0.1 μm to 1 μm while the thicknesses were held constant at 0.45 μm. A near bamboo-like structure was observed in the sub-μm wide lines. The effective resistivity of the Cu lines was found to be about 2.3 μΩ-cm and was independent of width after annealing at 400 °C.

Characterizations of CNx thin films made by ionized physical vapor deposition

2005 ◽  
Vol 482 (1-2) ◽  
pp. 192-196 ◽  
Author(s):  
F. Tétard ◽  
P. Djemia ◽  
M.P. Besland ◽  
P.Y. Tessier ◽  
B. Angleraud
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ionized Physical Vapor Deposition
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