Atomic force microscopy and ellipsometry study of the nucleation and growth mechanism of polycrystalline silicon films on silicon dioxide

1998 ◽  
Vol 16 (4) ◽  
pp. 2466-2479 ◽  
Author(s):  
C. Basa ◽  
M. Tinani ◽  
E. A. Irene
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Dioxide ◽  
Growth Mechanism ◽  
Polycrystalline Silicon ◽  
Nucleation And Growth ◽  
Silicon Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Polycrystalline Silicon Films ◽  
Nucleation And Growth Mechanism

scholarly journals Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
D. Li ◽  
G. L. Liu ◽  
Y. Yang ◽  
J. H. Wu ◽  
Z. R. Huang
Keyword(s):  
Growth Mechanism ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Initial Stage ◽  
Initial Nucleation ◽  
Si Films ◽  
20 Nm ◽  
Nucleation And Growth Mechanism

The nanoscale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film. The atomic force microscopy (AFM) was used to investigate the surface topography of the as-deposited Si film. The initial nucleation and growth process of the film was described. The continuous film had been already formed when the film thickness was 10 nm. The growth of the deposited Si film accorded with the Volmer-Weber growth mode.

Nucleation and growth of SrTiO 3 /Si(100) observed by atomic force microscopy

1998 ◽  
Vol 125 (1) ◽  
pp. 58-64 ◽  
Author(s):  
R. Castro-Rodriguez ◽  
A.I. Oliva ◽  
M. Aguilar ◽  
P. Bartolo-Perez ◽  
E. Vasco ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Nucleation And Growth ◽  
Force Microscopy ◽  
Atomic Force

Imaging Electron Transport across Grain Boundaries in an Integrated Electron and Atomic Force Microscopy Platform: Application to Polycrystalline Silicon Solar Cells

2009 ◽  
Vol 1153 ◽  
Author(s):  
Manuel J Romero ◽  
Fude Liu ◽  
Oliver Kunz ◽  
Johnson Wong ◽  
Chun-Sheng Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Solar Cells ◽  
Electron Transport ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
High Energy ◽  
Dominant Factor ◽  
Force Microscopy ◽  
Atomic Force

AbstractWe have investigated the local electron transport in polycrystalline silicon (pc-Si) thin-films by atomic force microscopy (AFM)-based measurements of the electron-beam-induced current (EBIC). EVA solar cells are produced at UNSW by <i>EVAporation</i> of a-Si and subsequent <i>solid-phase crystallization</i>–a potentially cost-effective approach to the production of pc-Si photovoltaics. A fundamental understanding of the electron transport in these pc-Si thin films is of prime importance to address the factors limiting the efficiency of EVA solar cells. EBIC measurements performed in combination with an AFM integrated inside an electron microscope can resolve the electron transport across individual grain boundaries. AFM-EBIC reveals that most grain boundaries present a high energy barrier to the transport of electrons for both p-type and n-type EVA thin-films. Furthermore, for p-type EVA pc-Si, in contrast with n-type, charged grain boundaries are seen. Recombination at grain boundaries seems to be the dominant factor limiting the efficiency of these pc-Si solar cells.

ATOMIC FORCE MICROSCOPY STUDIES ON GROWTH STEPS AND 2D NUCLEI ON THE {100} FACES OF DEUTERATED L-ARGININE PHOSPHATE CRYSTALS

2004 ◽  
Vol 11 (04n05) ◽  
pp. 379-383 ◽  
Author(s):  
Y. L. GENG ◽  
D. XU ◽  
D. L. SUN ◽  
W. DU ◽  
H. Y. LIU ◽  
...  
Keyword(s):  
Growth Rate ◽  
Atomic Force Microscopy ◽  
Growth Mechanism ◽  
Layer Growth ◽  
Ex Situ ◽  
Force Microscopy ◽  
Atomic Force

Growth steps and 2D nuclei of the {100} faces of the deuterated L-arginine phosphate (DLAP) crystals have been studied using ex-situ atomic force microscopy (AFM). Straight steps along the b direction as well as meandered steps are detected. The bunched steps have wider terraces than the elementary ones, which are supposed to result from the slower growth rate of the former than the latter. Many 2D nuclei exist on the step terraces and edges acting as the growth sources. Occasionally, 2D islands generated by 2D nuclei could also be observed. In conclusion, the crystal grows by layer growth mechanism.

scholarly journals Nucleation and growth of PrBa2Cu3O7−δ barrier layers on ramps in DyBa2Cu3O7−δ studied by atomic force microscopy

1996 ◽  
Vol 68 (9) ◽  
pp. 1276-1278 ◽  
Author(s):  
M. A. J. Verhoeven ◽  
R. Moerman ◽  
M. E. Bijlsma ◽  
A. J. H. M. Rijnders ◽  
D. H. A. Blank ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Nucleation And Growth ◽  
Force Microscopy ◽  
Barrier Layers ◽  
Atomic Force
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