scholarly journals Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

1998 ◽  
Vol 16 (3) ◽  
pp. 1721-1729 ◽  
Author(s):  
G. Lucovsky ◽  
H. Niimi ◽  
Y. Wu ◽  
C. R. Parker ◽  
J. R. Hauser
Keyword(s):  
Thermal Processing ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing

MOS characteristics of fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/

1990 ◽  
Vol 11 (11) ◽  
pp. 511-513 ◽  
Author(s):  
G.Q. Lo ◽  
W. Ting ◽  
D.-L. Kwong ◽  
J. Kuehne ◽  
C.W. Magee
Keyword(s):  
Thermal Processing ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing

High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp

1993 ◽  
Vol 303 ◽  
Author(s):  
G. W. Yoon ◽  
A. B. Joshi ◽  
J. Kim ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Dielectric Breakdown ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Time Dependent ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Stress Induced Leakage Current ◽  
As Stress

ABSTRACTIn this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 Å) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

Sign in / Sign up

Export Citation Format

Share Document