Explosive Thermal Decomposition Mechanism of NTO

1995 ◽  
Vol 418 ◽  
Author(s):  
David J. Beardall ◽  
Tod R. Botcher ◽  
Charles A. Wight
Keyword(s):  
Thin Films ◽  
Thermal Decomposition ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Condensed Phase ◽  
Decomposition Product ◽  
Rapid Heating ◽  
Initial Step ◽  
Thermal Decomposition Mechanism ◽  
Decomposition Products

AbstractThe initial step of the thermal decomposition of NTO (5-nitro-2,4-dihydro-3H-1,2,4- triazol-3-one) is determined by pulsed infrared laser pyrolysis of thin films. Rapid heating of the film and quenching to 77 K allows one to trap the initial decomposition products in the condensed phase and analyze them using transmission Fourier-transform infrared spectroscopy. The initial decomposition product is CO2; NO2 and HONO are not observed. We propose a new mechanism for NTO decomposition in which CO2 is formed.

scholarly journals Thermal decomposition of tris(O-ethyldithiocarbonato)-antimony(III)—a single-source precursor for antimony sulfide thin films

2021 ◽  
Author(s):  
Jako S. Eensalu ◽  
Kaia Tõnsuaadu ◽  
Jasper Adamson ◽  
Ilona Oja Acik ◽  
Malle Krunks
Keyword(s):  
Thin Films ◽  
Thermal Decomposition ◽  
Mass Loss ◽  
Solid Phase ◽  
Evolved Gas Analysis ◽  
Gas Analysis ◽  
Thermal Decomposition Mechanism ◽  
Product Analysis ◽  
Gaseous Species ◽  
Single Source Precursor

AbstractThermal decomposition of tris(O-ethyldithiocarbonato)-antimony(III) (1), a precursor for Sb2S3 thin films synthesized from an acidified aqueous solution of SbCl3 and KS2COCH2CH3, was monitored by simultaneous thermogravimetry, differential thermal analysis and evolved gas analysis via mass spectroscopy (TG/DTA-EGA-MS) measurements in dynamic Ar, and synthetic air atmospheres. 1 was identified by Fourier transform infrared spectroscopy (FTIR) and nuclear magnetic resonance (NMR) measurements, and quantified by NMR and elemental analysis. Solid intermediates and final decomposition products of 1 prepared in both atmospheres were determined by X-ray diffraction (XRD), Raman spectroscopy, and FTIR. 1 is a complex compound, where Sb is coordinated by three ethyldithiocarbonate ligands via the S atoms. The thermal degradation of 1 in Ar consists of three mass loss steps, and four mass loss steps in synthetic air. The total mass losses are 100% at 800 °C in Ar, and 66.8% at 600 °C in synthetic air, where the final product is Sb2O4. 1 melts at 85 °C, and decomposes at 90–170 °C into mainly Sb2S3, as confirmed by Raman, and an impurity phase consisting mostly of CSO 2 2− ligands. The solid-phase mineralizes fully at ≈240 °C, which permits Sb2S3 to crystallize at around 250 °C in both atmospheres. The gaseous species evolved include CS2, C2H5OH, CO, CO2, COS, H2O, SO2, and minor quantities of C2H5SH, (C2H5)2S, (C2H5)2O, and (S2COCH2CH3)2. The thermal decomposition mechanism of 1 is described with chemical reactions based on EGA-MS and solid intermediate decomposition product analysis.

scholarly journals Comparative thermal research on tetraazapentalene-derived heat-resistant energetic structures

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jing Zhou ◽  
Li Ding ◽  
Yong Zhu ◽  
Bozhou Wang ◽  
Xiangzhi Li ◽  
...  
Keyword(s):  
Differential Scanning Calorimetry ◽  
Thermal Decomposition ◽  
Fourier Transform ◽  
Energetic Materials ◽  
Great Influence ◽  
Fourier Transform Infrared ◽  
Thermal Decomposition Mechanism ◽  
Scanning Calorimetry ◽  
In Situ Ftir Spectroscopy ◽  
Heat Resistant

AbstractOrganic inner salt structures are ideal backbones for heat-resistant energetic materials and systematic studies towards the thermal properties of energetic organic inner salt structures are crucial to their applications. Herein, we report a comparative thermal research of two energetic organic inner salts with different tetraazapentalene backbones. Detailed thermal decomposition behaviors and kinetics were investigated through differential scanning calorimetry and thermogravimetric analysis (DSC-TG) methods, showing that the thermal stability of the inner salts is higher than most of the traditional heat-resistant energetic materials. Further studies towards the thermal decomposition mechanism were carried out through condensed-phase thermolysis/Fourier-transform infrared (in-situ FTIR) spectroscopy and the combination of differential scanning calorimetry-thermogravimetry-mass spectrometry-Fourier-transform infrared spectroscopy (DSC-TG-MS-FTIR) techniques. The experiment and calculation results prove that the arrangement of the inner salt backbones has great influence on the thermal decompositions of the corresponding energetic materials. The weak N4-N5 bond in “y-” pattern tetraazapentalene backbone lead to early decomposition process and the “z-” pattern tetraazapentalene backbone exhibits more concentrated decomposition behaviors.

Physical Properties of Thin Films of GaAs and AlxGa1-xAs Grown by Solid-Arsenic-Based MOCVD

2014 ◽  
Vol 976 ◽  
pp. 25-29
Author(s):  
Roberto Castillo-Ojeda ◽  
Joel Diaz-Reyes ◽  
Miguel Galván-Arellano ◽  
Ramon Peña-Sierra
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Low Temperature ◽  
Growth Process ◽  
Carbon Incorporation ◽  
Infrared Measurements ◽  
Hall Effect Measurements ◽  
Low Temperature Photoluminescence

We have studied the optical properties of GaAs and AlxGa1-xAs thin films using low-temperature photoluminescence and Fourier transform infrared spectroscopy. The GaAs and its alloys were grown by MOCVD using solid arsenic instead of arsine, as the arsenic precursor. The gallium and aluminium precursors were trimethylgallium (TMGa) and trimethylaluminium (TMAl), respectively. Some difficulties for growing AlxGa1-xAs by solid-arsenic-based MOCVD system are the composition homogeneity of the layers and the oxygen and carbon incorporation during the growth process. The composition homogeneity of the films was evaluated by low-temperature photoluminescence. Infrared measurements on the samples allowed the identification of the residual impurities, which are carbon-substitutional, Ga2O3, molecular oxygen, humidity and two unidentified impurities. Samples grown at temperatures lower than 750°C were highly resistive, independently of the ratio V/III used; the samples grown at higher temperatures were n-type, as it was proved by Hall effect measurements.

Plasma Polymerization of Hexamethyldisiloxane and Tetraethoxysilane Thin Films for Humidity Sensing Application

2014 ◽  
Vol 354 ◽  
pp. 41-47 ◽  
Author(s):  
N. Guermat ◽  
A. Bellel ◽  
Salah Sahli ◽  
Yvan Segui ◽  
Patrice Raynaud
Keyword(s):  
Thin Films ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Relative Humidity ◽  
Plasma Polymerization ◽  
Humidity Sensing ◽  
Response And Recovery ◽  
Sensing Application ◽  
Higher Sensitivity ◽  
Humidity Sensing Properties

Humidity sensitive layers elaborated from pure HMDSO and TEOS by PECVD technique have been studied. Humidity sensing properties including impedance relative humidity (RH) and current RH characteristics were investigated. TEOS films show higher sensitivity and excellent linearity over the explored range of humidity (20–95% RH). However, HMDSO films exhibits a small response and recovery of about 8 and 34 s for humidification and desiccation, respectively, in addition to very low hysteresis (2%). Structural analyses of sensitive layers were characterized by Fourier transform infrared spectroscopy (FTIR).

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